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Discrete Semiconductor Products
APTM60A11FT1G
ActiveMicrochip Technology
POWER FIELD-EFFECT TRANSISTOR, 40A I(D), 600V, 0.11OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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Search across all available documentation for this part.
Discrete Semiconductor Products
APTM60A11FT1G
ActiveMicrochip Technology
POWER FIELD-EFFECT TRANSISTOR, 40A I(D), 600V, 0.11OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | APTM60A11FT1G |
|---|---|
| Configuration | 2 N-Channel (Half Bridge) |
| Current - Continuous Drain (Id) @ 25°C | 40 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 330 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 10552 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | SP1 |
| Power - Max [Max] | 390 W |
| Rds On (Max) @ Id, Vgs | 132 mOhm |
| Supplier Device Package | SP1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 15 | $ 69.84 | |
| Microchip Direct | N/A | 1 | $ 69.84 | |
| 50 | $ 58.20 | |||
| 100 | $ 51.21 | |||
| 250 | $ 49.82 | |||
| 500 | $ 48.42 | |||
| 1000 | $ 46.56 | |||
| 5000 | $ 43.77 | |||
| Newark | Each | 5 | $ 55.87 | |
| 50 | $ 54.01 | |||
| 100 | $ 52.15 | |||
| 250 | $ 52.15 | |||
| 500 | $ 52.15 | |||
Description
General part information
APTM60H23FT1G-Module Series
* FREDFETs
* Low RDSon
* Low input and Miller capacitance
Documents
Technical documentation and resources