APTM60H23FT1G-Module Series

600V/Full bridge/Si MOSFET modules

Catalog

600V/Full bridge/Si MOSFET modules

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Power - Max [Max]	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Configuration	Gate Charge (Qg) (Max) @ Vgs	Configuration
Microchip Technology APTM60A11FT1G	132 mOhm	600 V	150 °C	-40 °C	MOSFET (Metal Oxide)	SP1	10552 pF	330 nC	Chassis Mount	390 W	5 V	SP1	40 A	2 N-Channel (Half Bridge)
Microchip Technology APTM60H23FT1G	276 mOhm	600 V	150 °C	-40 °C	MOSFET (Metal Oxide)	SP1	5316 pF		Chassis Mount	208 W		SP1	20 A		165 nC	4 N-Channel

Catalog

600V/Full bridge/Si MOSFET modules

Key Features

- Configuration: Full bridge

- VDSS (V): 600

- RDSon (mR) typ: 230

- Current (A) Tc=80C: 15

- Silicon type: FREDFET 8

- Package: SP1F

Description

* FREDFETs * Low RDSon * Low input and Miller capacitance * Low gate charge * Fast intrinsic reverse diode * Avalanche energy rated * Very rugged * Kelvin source for easy drive * Low stray inductance * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Internal thermistor for temperature monitoring (optional) * Low junction to case thermal resistance * RoHS Compliant