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ROHM Semiconductor-SCS230KE2GC11 Rectifiers Diode Schottky SiC 1.2KV 30A 3-Pin(3+Tab) TO-247N Tube

Discrete Semiconductor Products

SCS230KE2GC11

Active

Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, DUAL COMMON CATHODE, 1.2 KV, 30 A, 51 NC, TO-247

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Search across all available documentation for this part.

DocumentsSCS230KE2GC11 Datasheet (PDF)Application Note EN +47

ROHM Semiconductor-SCS230KE2GC11 Rectifiers Diode Schottky SiC 1.2KV 30A 3-Pin(3+Tab) TO-247N Tube

Discrete Semiconductor Products

SCS230KE2GC11

Active

Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, DUAL COMMON CATHODE, 1.2 KV, 30 A, 51 NC, TO-247

Deep-Dive with AI

DocumentsSCS230KE2GC11 Datasheet (PDF)Application Note EN +47

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCS230KE2GC11

Current - Average Rectified (Io) (per Diode)	15 A
Current - Reverse Leakage @ Vr	300 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction	175 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247N
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	114	$ 20.14
	Tube	1	$ 17.26
		10	$ 12.37
		450	$ 11.40
Mouser	N/A	1	$ 19.70
		10	$ 14.44
		250	$ 11.41
		450	$ 11.40
Newark	Each	1	$ 20.49
		10	$ 15.02
		30	$ 14.23
		50	$ 13.45
		100	$ 12.66
		250	$ 11.87
		500	$ 11.86

Description

General part information

SCS230 Series

Switching loss reduced, enabling high-speed switching . (3-pin package)

Documents

Technical documentation and resources

SCS230KE2GC11 Datasheet (PDF)

Application Note EN

About Flammability of Materials

Environmental Data

Application Note for SiC Power Devices and Modules

Schematic Design & Verification

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Measurement Method and Usage of Thermal Resistance RthJC

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Notes for Temperature Measurement Using Forward Voltage of PN Junction

ESD Data

Characteristics Data

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Condition of Soldering

Package Information

What is a Thermal Model? (SiC Power Device)

About Export Administration Regulations (EAR)

Export Information

4 Steps for Successful Thermal Designing of Power Devices

How to Create Symbols for PSpice Models

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Reliability Test Result

Manufacturing Data

What Is Thermal Design

Oscillation countermeasures for MOSFETs in parallel

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

Judgment Criteria of Thermal Evaluation

Anti-Whisker formation

Package Information

Explanation for Marking - TO-247N SiC_Marking-e.pdf

Package Information

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Package Dimensions

Package Information

How to Suppress the Parallel Drive Oscillation in SiC Modules

Application Note

Precautions for Thermal Resistance of Insulation Sheet

How to measure the oscillation occurs between parallel-connected devices

Technical Article

PCB Layout Thermal Design Guide

Diode Types and Applications

Technical Article

Inner Structure

Package Information

Method for Monitoring Switching Waveform

Schematic Design & Verification

How to Use Thermal Models

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Basics of Thermal Resistance and Heat Dissipation

Taping Information

Package Information

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Part Explanation

Application Note

Precautions When Measuring the Rear of the Package with a Thermocouple

Two-Resistor Model for Thermal Simulation

Notes for Calculating Power Consumption:Static Operation

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Compliance of the ELV directive

Environmental Data

How to Use LTspice® Models

Schematic Design & Verification

SCS230 Series

1200V, 30A, 3-pin THD, Silicon-carbide (SiC) SBD

Part	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io) (per Diode)	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Technology	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Diode Configuration	Package / Case	Supplier Device Package	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Grade	Qualification
Rohm Semiconductor SCS230KE2HRC11	175 ░C	1.6 V	15 A	0 ns	300 µA	SiC (Silicon Carbide) Schottky	500 mA	1.2 kV	Through Hole	1 Pair Common Cathode	TO-247-3	TO-247
Rohm Semiconductor SCS230KE2GC11		1.6 V	15 A	0 ns	300 µA	SiC (Silicon Carbide) Schottky	500 mA	1.2 kV	Through Hole	1 Pair Common Cathode	TO-247-3	TO-247N	175 °C
Rohm Semiconductor SCS230AE2GC11			15 A	0 ns	300 µA	SiC (Silicon Carbide) Schottky	500 mA	650 V	Through Hole	1 Pair Common Cathode	TO-247-3	TO-247N	175 °C	1.55 V
Rohm Semiconductor SCS230AE2HRC	175 ░C		15 A		300 µA	SiC (Silicon Carbide) Schottky	500 mA	650 V	Through Hole	1 Pair Common Cathode	TO-247-3	TO-247		1.55 V	Automotive	AEC-Q101