Discrete Semiconductor Products

SCS230KE2HRC11

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DIODE ARRAY SIC 1200V 15A TO-247

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Discrete Semiconductor Products

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DIODE ARRAY SIC 1200V 15A TO-247

Technical Specifications

Parameters and characteristics for this part

Specification	SCS230KE2HRC11

Current - Average Rectified (Io) (per Diode)	15 A
Current - Reverse Leakage @ Vr	300 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.6 V

1200V, 30A, 3-pin THD, Silicon-carbide (SiC) SBD

Part	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io) (per Diode)	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Technology	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Diode Configuration	Package / Case	Supplier Device Package	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Grade	Qualification
Rohm Semiconductor SCS230KE2HRC11	175 ░C	1.6 V	15 A	0 ns	300 µA	SiC (Silicon Carbide) Schottky	500 mA	1.2 kV	Through Hole	1 Pair Common Cathode	TO-247-3	TO-247
Rohm Semiconductor SCS230KE2GC11		1.6 V	15 A	0 ns	300 µA	SiC (Silicon Carbide) Schottky	500 mA	1.2 kV	Through Hole	1 Pair Common Cathode	TO-247-3	TO-247N	175 °C
Rohm Semiconductor SCS230AE2GC11			15 A	0 ns	300 µA	SiC (Silicon Carbide) Schottky	500 mA	650 V	Through Hole	1 Pair Common Cathode	TO-247-3	TO-247N	175 °C	1.55 V
Rohm Semiconductor SCS230AE2HRC	175 ░C		15 A		300 µA	SiC (Silicon Carbide) Schottky	500 mA	650 V	Through Hole	1 Pair Common Cathode	TO-247-3	TO-247		1.55 V	Automotive	AEC-Q101

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General part information

Switching loss reduced, enabling high-speed switching . (3-pin package)

Technical documentation and resources

No documents available