Catalog
1200V, 30A, 3-pin THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching . (3-pin package)
1200V, 30A, 3-pin THD, Silicon-carbide (SiC) SBD
1200V, 30A, 3-pin THD, Silicon-carbide (SiC) SBD
| Part | Operating Temperature - Junction [Max] | Voltage - Forward (Vf) (Max) @ If [Max] | Current - Average Rectified (Io) (per Diode) | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Technology | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Diode Configuration | Package / Case | Supplier Device Package | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 175 ░C | 1.6 V | 15 A | 0 ns | 300 µA | SiC (Silicon Carbide) Schottky | 500 mA | 1.2 kV | Through Hole | 1 Pair Common Cathode | TO-247-3 | TO-247 | ||||
Rohm Semiconductor | 1.6 V | 15 A | 0 ns | 300 µA | SiC (Silicon Carbide) Schottky | 500 mA | 1.2 kV | Through Hole | 1 Pair Common Cathode | TO-247-3 | TO-247N | 175 °C | ||||
Rohm Semiconductor | 15 A | 0 ns | 300 µA | SiC (Silicon Carbide) Schottky | 500 mA | 650 V | Through Hole | 1 Pair Common Cathode | TO-247-3 | TO-247N | 175 °C | 1.55 V | ||||
Rohm Semiconductor | 175 ░C | 15 A | 300 µA | SiC (Silicon Carbide) Schottky | 500 mA | 650 V | Through Hole | 1 Pair Common Cathode | TO-247-3 | TO-247 | 1.55 V | Automotive | AEC-Q101 |