Specification	PMPB10XNX

Current - Continuous Drain (Id) @ 25°C	9.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1761 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	3.8 W, 12.5 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

PMPB10XN Series

30 V, N-channel Trench MOSFET

Part	Package / Case	Drain to Source Voltage (Vdss)	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Freescale Semiconductor - NXP PMPB10UPX	6-UDFN Exposed Pad	12 V	MOSFET (Metal Oxide)	P-Channel	-55 °C	150 °C	1.8 V 4.5 V	1.7 W 13 mW	10 A	DFN2020MD-6	2200 pF	8 V	Surface Mount	40 nC	900 mV	11.5 mOhm
Freescale Semiconductor - NXP PMPB10ENZ	6-UDFN Exposed Pad	30 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	4.5 V 10 V	1.8 W 12.5 W	10 A	DFN2020MD-6	840 pF	20 V	Surface Mount		2 V	12 mOhm	20.6 nC
Freescale Semiconductor - NXP PMPB10XNX	6-UDFN Exposed Pad	30 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	1.5 V 4.5 V	3.8 W 12.5 W	9.5 A	DFN2020MD-6	1761 pF	8 V	Surface Mount		900 mV	13 mOhm	30 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	6000	$ 0.12
Digikey	Cut Tape (CT)	1	$ 0.41
		10	$ 0.35
		100	$ 0.25
		500	$ 0.19
		1000	$ 0.16
	Digi-Reel®	1	$ 0.41
		10	$ 0.35
		100	$ 0.25
		500	$ 0.19
		1000	$ 0.16
	Tape & Reel (TR)	3000	$ 0.14
		6000	$ 0.13
		9000	$ 0.12
		30000	$ 0.12

Description

General part information

PMPB10XN Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Documents

Technical documentation and resources

Datasheet

plastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body

Package information

Small & light automotive diodes and transistors

Leaflet

plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body

Marcom graphics

PMPB10XNX

Deep-Dive with AI

PMPB10XNX

Deep-Dive with AI

Technical Specifications

PMPB10XN Series

Pricing

Description

PMPB10XN Series

Documents

Datasheet

Questions about package outline drawings

Nexperia package poster

Automatic Optical Inspection of DFN Components

小巧轻便的汽车 二极管和晶体管

Thermal performance of DFN packages

plastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body

Small & light automotive diodes and transistors

plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body

PMPB10XN Series

小巧轻便的汽车二极管和晶体管