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DFN2020MD-6
Discrete Semiconductor Products

PMPB10ENZ

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Freescale Semiconductor - NXP

MOSFET N-CH 30V 10A DFN2020MD-6

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DFN2020MD-6
Discrete Semiconductor Products

PMPB10ENZ

Active
Freescale Semiconductor - NXP

MOSFET N-CH 30V 10A DFN2020MD-6

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPMPB10ENZ
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20.6 nC
Input Capacitance (Ciss) (Max) @ Vds840 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power Dissipation (Max)1.8 W, 12.5 W
Rds On (Max) @ Id, Vgs12 mOhm
Supplier Device PackageDFN2020MD-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.13
6000$ 0.12
9000$ 0.11
30000$ 0.11
75000$ 0.11

Description

General part information

PMPB10XN Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Documents

Technical documentation and resources