Discrete Semiconductor Products

PMPB10UPX

Obsolete

Freescale Semiconductor - NXP

MOSFET P-CH 12V 10A DFN2020MD-6

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Discrete Semiconductor Products

PMPB10UPX

Obsolete

Freescale Semiconductor - NXP

MOSFET P-CH 12V 10A DFN2020MD-6

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB10UPX

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	2200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	1.7 W, 13 mW
Rds On (Max) @ Id, Vgs	11.5 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

PMPB10XN Series

30 V, N-channel Trench MOSFET

Part	Package / Case	Drain to Source Voltage (Vdss)	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Freescale Semiconductor - NXP PMPB10UPX	6-UDFN Exposed Pad	12 V	MOSFET (Metal Oxide)	P-Channel	-55 °C	150 °C	1.8 V 4.5 V	1.7 W 13 mW	10 A	DFN2020MD-6	2200 pF	8 V	Surface Mount	40 nC	900 mV	11.5 mOhm
Freescale Semiconductor - NXP PMPB10ENZ	6-UDFN Exposed Pad	30 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	4.5 V 10 V	1.8 W 12.5 W	10 A	DFN2020MD-6	840 pF	20 V	Surface Mount		2 V	12 mOhm	20.6 nC
Freescale Semiconductor - NXP PMPB10XNX	6-UDFN Exposed Pad	30 V	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	1.5 V 4.5 V	3.8 W 12.5 W	9.5 A	DFN2020MD-6	1761 pF	8 V	Surface Mount		900 mV	13 mOhm	30 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

PMPB10XN Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Documents

Technical documentation and resources