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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Package / Case | Drain to Source Voltage (Vdss) | Technology | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | 6-UDFN Exposed Pad | 12 V | MOSFET (Metal Oxide) | P-Channel | -55 °C | 150 °C | 1.8 V 4.5 V | 1.7 W 13 mW | 10 A | DFN2020MD-6 | 2200 pF | 8 V | Surface Mount | 40 nC | 900 mV | 11.5 mOhm | |
Freescale Semiconductor - NXP | 6-UDFN Exposed Pad | 30 V | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | 4.5 V 10 V | 1.8 W 12.5 W | 10 A | DFN2020MD-6 | 840 pF | 20 V | Surface Mount | 2 V | 12 mOhm | 20.6 nC | |
 Freescale Semiconductor - NXP | 6-UDFN Exposed Pad | 30 V | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | 1.5 V 4.5 V | 3.8 W 12.5 W | 9.5 A | DFN2020MD-6 | 1761 pF | 8 V | Surface Mount | 900 mV | 13 mOhm | 30 nC |