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TO-247-3 AD Long Lead EP
Discrete Semiconductor Products

LSIC1MO120E0080

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LITTELFUSE

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 39 A, 1.2 KV, 0.08 OHM, TO-247

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TO-247-3 AD Long Lead EP
Discrete Semiconductor Products

LSIC1MO120E0080

Active
LITTELFUSE

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 39 A, 1.2 KV, 0.08 OHM, TO-247

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationLSIC1MO120E0080
Current - Continuous Drain (Id) @ 25°C39 A
Drain to Source Voltage (Vdss)1.2 kV
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs95 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1825 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 C
Package / CaseTO-247-3
Power Dissipation (Max)179 W
Rds On (Max) @ Id, Vgs100 mOhm
Supplier Device PackageTO-247AD
Vgs (Max) [Max]22 V, -6 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 369$ 18.151m+
Tube 1$ 23.241m+
10$ 16.77
100$ 13.40
NewarkEach 1$ 22.631m+
5$ 20.57
10$ 18.51
25$ 16.45
100$ 14.39
500$ 14.10
TMEN/A 1$ 18.38<1d
5$ 17.35

Description

General part information

LSIC1MO120 Series

Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0120 1200 V come in ratings of 1200 V, 120 mOhm in a TO-247-3L package.

Documents

Technical documentation and resources