Discrete Semiconductor Products

LSIC1MO120T0080-TU

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1200V/80MOHM SIC MOSFET TO-263-7L/ TUBE

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Discrete Semiconductor Products

Active

1200V/80MOHM SIC MOSFET TO-263-7L/ TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	LSIC1MO120T0080-TU

Current - Continuous Drain (Id) @ 25°C	39 A
Drain to Source Voltage (Vdss)	1.2 kV
FET Type	N-Channel
Mounting Type	Surface Mount
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Supplier Device Package	TO-263-7

1200V/120mohm SiC MOSFET TO-247-3L

Part	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
LITTELFUSE LSIC1MO120E0160	125 W	Through Hole	TO-247AD	870 pF	22 A	150 °C	-55 °C	N-Channel	TO-247-3	200 mOhm	1.2 kV	-6 V 22 V	4 V
LITTELFUSE LSIC1MO120T0080-TU		Surface Mount	TO-263-7		39 A			N-Channel	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA		1.2 kV
LITTELFUSE LSIC1MO120E0120	139 W	Through Hole	TO-247AD	1125 pF	27 A	150 °C	-55 °C	N-Channel	TO-247-3	150 mOhm	1.2 kV	-6 V 22 V	4 V	80 nC
LITTELFUSE LSIC1MO120E0080	179 W	Through Hole	TO-247AD	1825 pF	39 A	150 °C	-55 C	N-Channel	TO-247-3	100 mOhm	1.2 kV	-6 V 22 V	4 V		95 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+
	Tube	400	$ 13.36	1m+
Newark	Each	250	$ 14.01	1m+
TME	N/A	1	$ 25.89	<1d
		5	$ 23.35
		25	$ 20.58
		100	$ 18.50
		400	$ 17.22

General part information

Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0120 1200 V come in ratings of 1200 V, 120 mOhm in a TO-247-3L package.

Technical documentation and resources