Specification	LSIC1MO120E0160

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	1.2 kV
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	TO-247AD
Vgs (Max) [Max]	22 V, -6 V
Vgs(th) (Max) @ Id	4 V

LSIC1MO120 Series

1200V/120mohm SiC MOSFET TO-247-3L

Part	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
LITTELFUSE LSIC1MO120E0160	125 W	Through Hole	TO-247AD	870 pF	22 A	150 °C	-55 °C	N-Channel	TO-247-3	200 mOhm	1.2 kV	-6 V 22 V	4 V
LITTELFUSE LSIC1MO120T0080-TU		Surface Mount	TO-263-7		39 A			N-Channel	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA		1.2 kV
LITTELFUSE LSIC1MO120E0120	139 W	Through Hole	TO-247AD	1125 pF	27 A	150 °C	-55 °C	N-Channel	TO-247-3	150 mOhm	1.2 kV	-6 V 22 V	4 V	80 nC
LITTELFUSE LSIC1MO120E0080	179 W	Through Hole	TO-247AD	1825 pF	39 A	150 °C	-55 C	N-Channel	TO-247-3	100 mOhm	1.2 kV	-6 V 22 V	4 V		95 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	1350	$ 12.49	1m+
		2226	$ 12.49
	Tube	1	$ 8.41	1m+
		30	$ 7.05
Newark	Each	1	$ 13.68	1m+
		5	$ 12.30
		10	$ 10.91
		25	$ 9.53
		100	$ 8.14
		500	$ 7.18
		1000	$ 6.91
TME	N/A	1	$ 11.33	<1d
		5	$ 9.58
		10	$ 9.25

General part information

Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0120 1200 V come in ratings of 1200 V, 120 mOhm in a TO-247-3L package.

Technical documentation and resources