Discrete Semiconductor Products

LSIC1MO120E0160

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SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 22 A, 1.2 KV, 0.16 OHM, TO-247

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Discrete Semiconductor Products

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SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 22 A, 1.2 KV, 0.16 OHM, TO-247

Technical Specifications

Parameters and characteristics for this part

Specification	LSIC1MO120E0160

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	TO-247AD
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-6 V
Vgs(th) (Max) @ Id	4 V

1200V/120mohm SiC MOSFET TO-247-3L

Part	Drain to Source Voltage (Vdss)	Vgs (Max) [Min]	Vgs (Max) [Max]	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
Littelfuse/Commercial Vehicle Products LSIC1MO120E0160	1200 V	-6 V	22 V	4 V	TO-247-3	Through Hole	870 pF	N-Channel	22 A	TO-247AD	-55 °C	150 °C	200 mOhm	125 W
Littelfuse/Commercial Vehicle Products LSIC1MO120E0120	1200 V	-6 V	22 V	4 V	TO-247-3	Through Hole	1125 pF	N-Channel	27 A	TO-247AD	-55 °C	150 °C	150 mOhm		80 nC	139 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0120 1200 V come in ratings of 1200 V, 120 mOhm in a TO-247-3L package.

Technical documentation and resources