
Discrete Semiconductor Products
10ETF12FP
ObsoleteVishay General Semiconductor - Diodes Division
DIODE GP 1.2KV 10A TO220ACFP
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet

Discrete Semiconductor Products
10ETF12FP
ObsoleteVishay General Semiconductor - Diodes Division
DIODE GP 1.2KV 10A TO220ACFP
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 10ETF12FP |
|---|---|
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 100 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-220-2 Full Pack |
| Reverse Recovery Time (trr) | 310 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-220AC Full Pack |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.33 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.41 | |
Description
General part information
10ETF12 Series
Diode 1200 V 10A Through Hole TO-220AC Full Pack
Documents
Technical documentation and resources