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MBRB15H50CT-E3/81
Discrete Semiconductor Products

VS-10ETF12STRRPBF

Unknown
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 10A TO263AB

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MBRB15H50CT-E3/81
Discrete Semiconductor Products

VS-10ETF12STRRPBF

Unknown
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 10A TO263AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationVS-10ETF12STRRPBF
Current - Average Rectified (Io)10 A
Current - Reverse Leakage @ Vr100 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-40 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Reverse Recovery Time (trr)310 ns
Speed500 ns, 200 mA
Supplier Device PackageTO-263AB (D2PAK)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]1.33 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

10ETF12 Series

Diode 1200 V 10A Surface Mount TO-263AB (D2PAK)

Documents

Technical documentation and resources