
Discrete Semiconductor Products
VS-10ETF12S-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 10A TO263AB
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Discrete Semiconductor Products
VS-10ETF12S-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 10A TO263AB
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-10ETF12S-M3 |
|---|---|
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 100 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Reverse Recovery Time (trr) | 310 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-263AB (D2PAK) |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.33 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.73 | |
| Tube | 8000 | $ 0.76 | ||
Description
General part information
10ETF12 Series
Diode 1200 V 10A Surface Mount TO-263AB (D2PAK)
Documents
Technical documentation and resources
No documents available