10ETF12 Series

Catalog

DIODE GEN PURP 1.2KV 10A TO263AB

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Speed	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Supplier Device Package	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Reverse Recovery Time (trr)	Qualification	Grade
Vishay General Semiconductor - Diodes Division VS-10ETF12STRRPBF	1.2 kV	Standard	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 mA 500 ns	100 µA	Surface Mount	1.33 V	10 A	TO-263AB (D2PAK)	-40 °C	150 °C	310 ns
Vishay General Semiconductor - Diodes Division VS-10ETF12THM3	1.2 kV	Standard	TO-220-2	200 mA 500 ns	100 µA	Through Hole	1.33 V	10 A	TO-220AC	-40 °C	150 °C	310 ns	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division VS-10ETF12S-M3	1.2 kV	Standard	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 mA 500 ns	100 µA	Surface Mount	1.33 V	10 A	TO-263AB (D2PAK)	-40 °C	150 °C	310 ns
Vishay General Semiconductor - Diodes Division VS-10ETF12-M3	1.2 kV	Standard	TO-220-2	200 mA 500 ns	100 µA	Through Hole	1.33 V	10 A	TO-220AC	-40 °C	150 °C	310 ns
Vishay General Semiconductor - Diodes Division 10ETF12FP	1.2 kV	Standard	TO-220-2 Full Pack	200 mA 500 ns	100 µA	Through Hole	1.33 V	10 A	TO-220AC Full Pack	-40 °C	150 °C	310 ns