Discrete Semiconductor Products

STGW40H65FB

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STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 40 A HIGH SPEED HB SERIES IGBT

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DocumentsDatasheet AN4694 +12

Discrete Semiconductor Products

STGW40H65FB

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STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 40 A HIGH SPEED HB SERIES IGBT

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DocumentsDatasheet AN4694 +12

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGW40H65FB

Current - Collector (Ic) (Max) [Max]	80 A
Gate Charge	210 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	283 W
Supplier Device Package	TO-247-3
Switching Energy	498 mJ, 363 mJ
Td (on/off) @ 25°C [custom]	142 ns
Td (on/off) @ 25°C [custom]	40 ns
Test Condition	40 A, 5 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic [Max]	2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

STGW40 Series

Trench gate field-stop IGBT, HB series 600 V, 40 A high speed

Part	Switching Energy	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Reverse Recovery Time (trr)	Package / Case	Test Condition	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Power - Max [Max]	Td (on/off) @ 25°C	Gate Charge	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Current - Collector Pulsed (Icm)
STMicroelectronics STGW40S120DF3	1.43 mJ 3.83 mJ	Trench Field Stop	175 °C	-55 °C	TO-247-3	355 ns	TO-247-3	15 V 15 Ohm 40 A 600 V	1200 V	Through Hole	468 W	35 ns 148 ns	129 nC	2.15 V	80 A
STMicroelectronics STGW40H60DLFB	363 µJ	Trench Field Stop	175 °C	-55 °C	TO-247		TO-247-3	10 Ohm 15 V 40 A 400 V	600 V	Through Hole	283 W	142 ns	210 nC	2 V	80 A	-
STMicroelectronics STGW40H65FB	363 mJ 498 mJ	Trench Field Stop	175 °C	-55 °C	TO-247-3		TO-247-3	5 Ohm 15 V 40 A 400 V	650 V	Through Hole	283 W		210 nC		80 A		2.3 V	142 ns	40 ns
STMicroelectronics STGW40V60DLF	411 µJ	Trench Field Stop	175 °C	-55 °C	TO-247-3		TO-247-3	10 Ohm 15 V 40 A 400 V	600 V	Through Hole	283 W	208 ns	226 nC		80 A	-	2.3 V
STMicroelectronics STGW40H120DF2	1 mJ 1.32 mJ	Trench Field Stop	175 °C	-55 °C	TO-247-3	488 ns	TO-247-3	10 Ohm 15 V 40 A 600 V	1200 V	Through Hole	468 W		187 nC	2.6 V	80 A			152 ns	18 ns
STMicroelectronics STGW40N120KD	3.7 mJ 5.7 mJ		125 °C	-55 ░C	TO-247-3	84 ns	TO-247-3	10 Ohm 15 V 30 A 960 V	1200 V	Through Hole	240 W	48 ns 338 ns	126 nC	3.85 V	80 A					120 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	684	$ 4.61
	Tube	1	$ 3.76
		30	$ 2.98
		120	$ 2.55
		510	$ 2.27
		1020	$ 1.94
		2010	$ 1.83
		5010	$ 1.76

Description

General part information

STGW40 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

STGW40H65FB

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STGW40H65FB

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Technical Specifications

STGW40 Series

Pricing

Description

STGW40 Series

Documents

Datasheet

AN4694

AN4544

AN5277

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TN1378

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TN1224

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TN1225

AN4638

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STGW40 Series