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STGW40H60DLFB

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, HB SERIES 600 V, 40 A HIGH SPEED

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Discrete Semiconductor Products

STGW40H60DLFB

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, HB SERIES 600 V, 40 A HIGH SPEED

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGW40H60DLFB

Current - Collector (Ic) (Max) [Max]	80 A
Gate Charge	210 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	283 W
Supplier Device Package	TO-247
Switching Energy	363 µJ
Td (on/off) @ 25°C	-
Td (on/off) @ 25°C	142 ns
Test Condition	10 Ohm, 40 A, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

STGW40H120DF2 Series

Trench gate field-stop IGBT, HB series 600 V, 40 A high speed

Part	Reverse Recovery Time (trr)	Supplier Device Package	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	IGBT Type	Power - Max [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition	Switching Energy	Gate Charge	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max)
STMicroelectronics STGW40S120DF3	355 ns	TO-247-3	35 ns 148 ns	2.15 V	-55 °C	175 ░C	Through Hole	Trench Field Stop	468 W	TO-247-3	80 A	1200 V	15 V 15 Ohm 40 A 600 V	1.43 mJ 3.83 mJ	129 nC
STMicroelectronics STGW40H60DLFB		TO-247		2 V	-55 °C	175 ░C	Through Hole	Trench Field Stop	283 W	TO-247-3	80 A	600 V	10 Ohm 15 V 40 A 400 V	363 µJ	210 nC	-	142 ns
STMicroelectronics STGW40H65FB		TO-247-3	40 ns	2.3 V	-55 °C	175 ░C	Through Hole	Trench Field Stop	283 W	TO-247-3	80 A		5 Ohm 15 V 40 A 400 V	363 mJ 498 mJ	210 nC			142 ns	650 V
STMicroelectronics STGW40V60DLF		TO-247-3		2.3 V	-55 °C	175 ░C	Through Hole	Trench Field Stop	283 W	TO-247-3	80 A	600 V	10 Ohm 15 V 40 A 400 V	411 µJ	226 nC		208 ns
STMicroelectronics STGW40H120DF2	488 ns	TO-247-3	18 ns 152 ns	2.6 V	-55 °C	175 ░C	Through Hole	Trench Field Stop	468 W	TO-247-3	80 A	1200 V	10 Ohm 15 V 40 A 600 V	1 mJ 1.32 mJ	187 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.55
		30	$ 3.61
		120	$ 3.09
		510	$ 2.75
		1020	$ 2.35
		2010	$ 2.22
Newark	Each	1	$ 5.76
		10	$ 5.03
		25	$ 3.79
		50	$ 3.67
		100	$ 3.54
		250	$ 3.34

Description

General part information

STGW40H120DF2 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

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Product Specifications

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STGW40H60DLFB

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STGW40H60DLFB

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Technical Specifications

STGW40H120DF2 Series

Pricing

Description

STGW40H120DF2 Series

Documents

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DS9539

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STGW40H120DF2 Series