Discrete Semiconductor Products

STGW40N120KD

Obsolete

STMicroelectronics

IGBT 1200V 80A 240W TO247

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Discrete Semiconductor Products

STGW40N120KD

Obsolete

STMicroelectronics

IGBT 1200V 80A 240W TO247

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGW40N120KD

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	126 nC
Mounting Type	Through Hole
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-55 ░C
Package / Case	TO-247-3
Power - Max [Max]	240 W
Reverse Recovery Time (trr)	84 ns
Supplier Device Package	TO-247-3
Switching Energy	3.7 mJ, 5.7 mJ
Td (on/off) @ 25°C	48 ns, 338 ns
Test Condition	10 Ohm, 30 A, 15 V, 960 V
Vce(on) (Max) @ Vge, Ic	3.85 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

STGW40 Series

Trench gate field-stop IGBT, HB series 600 V, 40 A high speed

Part	Switching Energy	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Reverse Recovery Time (trr)	Package / Case	Test Condition	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Power - Max [Max]	Td (on/off) @ 25°C	Gate Charge	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Current - Collector Pulsed (Icm)
STMicroelectronics STGW40S120DF3	1.43 mJ 3.83 mJ	Trench Field Stop	175 °C	-55 °C	TO-247-3	355 ns	TO-247-3	15 V 15 Ohm 40 A 600 V	1200 V	Through Hole	468 W	35 ns 148 ns	129 nC	2.15 V	80 A
STMicroelectronics STGW40H60DLFB	363 µJ	Trench Field Stop	175 °C	-55 °C	TO-247		TO-247-3	10 Ohm 15 V 40 A 400 V	600 V	Through Hole	283 W	142 ns	210 nC	2 V	80 A	-
STMicroelectronics STGW40H65FB	363 mJ 498 mJ	Trench Field Stop	175 °C	-55 °C	TO-247-3		TO-247-3	5 Ohm 15 V 40 A 400 V	650 V	Through Hole	283 W		210 nC		80 A		2.3 V	142 ns	40 ns
STMicroelectronics STGW40V60DLF	411 µJ	Trench Field Stop	175 °C	-55 °C	TO-247-3		TO-247-3	10 Ohm 15 V 40 A 400 V	600 V	Through Hole	283 W	208 ns	226 nC		80 A	-	2.3 V
STMicroelectronics STGW40H120DF2	1 mJ 1.32 mJ	Trench Field Stop	175 °C	-55 °C	TO-247-3	488 ns	TO-247-3	10 Ohm 15 V 40 A 600 V	1200 V	Through Hole	468 W		187 nC	2.6 V	80 A			152 ns	18 ns
STMicroelectronics STGW40N120KD	3.7 mJ 5.7 mJ		125 °C	-55 ░C	TO-247-3	84 ns	TO-247-3	10 Ohm 15 V 30 A 960 V	1200 V	Through Hole	240 W	48 ns 338 ns	126 nC	3.85 V	80 A					120 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.19

Description

General part information

STGW40 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources