Discrete Semiconductor Products

SI3424CDV-T1-GE3

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MOSFET, N-CH, 30V, 8A, TSOP ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, N-CH, 30V, 8A, TSOP ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	SI3424CDV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	405 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	3.6 W
Rds On (Max) @ Id, Vgs [Max]	26 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Package / Case	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SI3424DV-T1-E3	30 V	5 A	6-TSOP	18 nC	250 µA 800 mV	N-Channel	SOT-23-6 Thin TSOT-23-6	MOSFET (Metal Oxide)	Surface Mount	28 mOhm
Vishay General Semiconductor - Diodes Division SI3424BDV-T1-E3	30 V	8 A	6-TSOP		3 V	N-Channel	SOT-23-6 Thin TSOT-23-6	MOSFET (Metal Oxide)	Surface Mount	28 mOhm	-55 °C	150 °C	4.5 V 10 V	735 pF	20 V	2.1 W 2.98 W	19.6 nC
Vishay General Semiconductor - Diodes Division SI3424CDV-T1-GE3	30 V	8 A	6-TSOP	12.5 nC	2.5 V	N-Channel	SOT-23-6 Thin TSOT-23-6	MOSFET (Metal Oxide)	Surface Mount		-55 °C	150 °C	4.5 V 10 V		20 V	3.6 W		405 pF	26 mOhm

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General part information

N-Channel 30 V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP

Technical documentation and resources