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Pkg 5540
Discrete Semiconductor Products

SI3424BDV-T1-E3

Obsolete

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DocumentsDatasheet
Pkg 5540
Discrete Semiconductor Products

SI3424BDV-T1-E3

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI3424BDV-T1-E3
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19.6 nC
Input Capacitance (Ciss) (Max) @ Vds735 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)2.98 W, 2.1 W
Rds On (Max) @ Id, Vgs28 mOhm
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SI3424 Series

N-Channel 30 V 8A (Tc) 2.1W (Ta), 2.98W (Tc) Surface Mount 6-TSOP

Documents

Technical documentation and resources