SI3424 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 30V 5A 6-TSOP
| Part | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | FET Type | Package / Case | Technology | Mounting Type | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 30 V | 5 A | 6-TSOP | 18 nC | 250 µA 800 mV | N-Channel | SOT-23-6 Thin TSOT-23-6 | MOSFET (Metal Oxide) | Surface Mount | 28 mOhm | |||||||||
Vishay General Semiconductor - Diodes Division | 30 V | 8 A | 6-TSOP | 3 V | N-Channel | SOT-23-6 Thin TSOT-23-6 | MOSFET (Metal Oxide) | Surface Mount | 28 mOhm | -55 °C | 150 °C | 4.5 V 10 V | 735 pF | 20 V | 2.1 W 2.98 W | 19.6 nC | |||
Vishay General Semiconductor - Diodes Division | 30 V | 8 A | 6-TSOP | 12.5 nC | 2.5 V | N-Channel | SOT-23-6 Thin TSOT-23-6 | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 150 °C | 4.5 V 10 V | 20 V | 3.6 W | 405 pF | 26 mOhm |