Discrete Semiconductor Products

SI3424DV-T1-E3

Obsolete

MOSFET N-CH 30V 5A 6-TSOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 5A 6-TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3424DV-T1-E3

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Mounting Type	Surface Mount
Package / Case	TSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	250 µA, 800 mV

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Package / Case	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SI3424DV-T1-E3	30 V	5 A	6-TSOP	18 nC	250 µA 800 mV	N-Channel	SOT-23-6 Thin TSOT-23-6	MOSFET (Metal Oxide)	Surface Mount	28 mOhm
Vishay General Semiconductor - Diodes Division SI3424BDV-T1-E3	30 V	8 A	6-TSOP		3 V	N-Channel	SOT-23-6 Thin TSOT-23-6	MOSFET (Metal Oxide)	Surface Mount	28 mOhm	-55 °C	150 °C	4.5 V 10 V	735 pF	20 V	2.1 W 2.98 W	19.6 nC
Vishay General Semiconductor - Diodes Division SI3424CDV-T1-GE3	30 V	8 A	6-TSOP	12.5 nC	2.5 V	N-Channel	SOT-23-6 Thin TSOT-23-6	MOSFET (Metal Oxide)	Surface Mount		-55 °C	150 °C	4.5 V 10 V		20 V	3.6 W		405 pF	26 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 5A (Ta) Surface Mount 6-TSOP

Technical documentation and resources

No documents available