Specification	RGW80TS65CHRC11

Current - Collector (Ic) (Max) [Max]	81 A
Gate Charge	110 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	214 W
Reverse Recovery Time (trr)	33 ns
Supplier Device Package	TO-247N
Switching Energy	120 µJ, 340 µJ
Td (on/off) @ 25°C	43 ns, 145 ns
Test Condition	20 A, 10 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic [Max]	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

RGW80 Series

High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Test Condition	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge	Power - Max [Max]	Td (on/off) @ 25°C	Switching Energy	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C
Rohm Semiconductor RGW80TS65EHRC11	Through Hole	80 A	1.9 V	650 V	TO-247-3	TO-247N	86 ns	10 Ohm 15 V 20 A 400 V	Trench Field Stop	175 °C	-40 °C	110 nC	214 W
Rohm Semiconductor RGW80TS65DGC11	Through Hole	78 A	1.9 V	650 V	TO-247-3	TO-247N	92 ns	10 Ohm 15 V 40 A 400 V	Trench Field Stop	175 °C	-40 °C	110 nC	214 W	44 ns 143 ns	720 µJ 760 µJ
Rohm Semiconductor RGW80TS65DHRC11	Through Hole	80 A	1.9 V	650 V	TO-247-3	TO-247N	92 ns	10 Ohm 15 V 20 A 400 V	Trench Field Stop	175 °C	-40 °C	110 nC	214 W			148 ns	42 ns
Rohm Semiconductor RGW80TS65CHRC11	Through Hole	81 A	1.9 V	650 V	TO-247-3	TO-247N	33 ns	10 Ohm 15 V 20 A 400 V		175 °C	-40 °C	110 nC	214 W		120 µJ 340 µJ			43 ns 145 ns
Rohm Semiconductor RGW80TS65HRC11	Through Hole	80 A	1.9 V	650 V	TO-247-3	TO-247N		10 Ohm 15 V 20 A 400 V	Trench Field Stop	175 °C	-40 °C	110 nC	214 W			148 ns	42 ns
Rohm Semiconductor RGW80TK65EGVC11	Through Hole	39 A	1.9 V	650 V	SC-93-3 TO-3PFM	TO-3PFM	102 ns	10 Ohm 15 V 40 A 400 V	Trench Field Stop	175 °C	-40 °C	110 nC	81 W	44 ns 143 ns	720 µJ 760 µJ

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	357	$ 14.49
	Tube	1	$ 12.66
		30	$ 10.25
		120	$ 9.65
		510	$ 8.74
		1020	$ 8.02
Mouser	N/A	1	$ 13.50
		10	$ 12.64
		25	$ 8.85
		100	$ 7.62
		450	$ 7.46
Newark	Each	1	$ 14.71
		10	$ 14.21
		25	$ 9.00
		50	$ 8.99
		100	$ 7.90
		250	$ 7.83
		900	$ 7.76

Description

General part information

RGW80 Series

The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power conditioners, and UPS.

Documents

Technical documentation and resources

RGW80TS65CHRC11

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RGW80TS65CHRC11

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Technical Specifications

RGW80 Series

Pricing

Description

RGW80 Series

Documents

Measurement Method and Usage of Thermal Resistance RthJC

How to Use LTspice&reg; Models

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

About Export Administration Regulations (EAR)

Impedance Characteristics of Bypass Capacitor

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

What Is Thermal Design

What is a Thermal Model? (IGBT)

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Precautions When Measuring the Rear of the Package with a Thermocouple

4 Steps for Successful Thermal Designing of Power Devices

Moisture Sensitivity Level

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Estimation of switching losses in IGBTs operating with resistive load

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Importance of Probe Calibration When Measuring Power: Deskew

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Notes for Temperature Measurement Using Thermocouples

Method for Monitoring Switching Waveform

Types and Features of Transistors

Precautions for Thermal Resistance of Insulation Sheet

Two-Resistor Model for Thermal Simulation

Package Dimensions

Part Explanation

Basics of Thermal Resistance and Heat Dissipation

How to Use LTspice&reg; Models: Tips for Improving Convergence

Anti-Whisker formation

Compliance of the ELV directive

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

About Flammability of Materials

Notes for Calculating Power Consumption:Static Operation

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

How to Use the Thermal Resistance and Thermal Characteristics Parameters

PCB Layout Thermal Design Guide

Judgment Criteria of Thermal Evaluation

Calculation of Power Dissipation in Switching Circuit

Technical Data Sheet EN

RGW80 Series

How to Use LTspice® Models

How to Use LTspice® Models: Tips for Improving Convergence