RGW80TS65DHR Series

High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Catalog

High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Part	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	IGBT Type	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition	Mounting Type	Supplier Device Package	Switching Energy	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Gate Charge	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max)
Rohm Semiconductor RGW80TS65DGC11	78 A	92 ns	Trench Field Stop	214 W	-40 C	175 °C	10 Ohm 15 V 40 A 400 V	Through Hole	TO-247N	720 µJ 760 µJ	44 ns	143 ns	650 V	TO-247-3	110 nC	1.9 V
Rohm Semiconductor RGW80TS65DHRC11	80 A	92 ns	Trench Field Stop	214 W	-40 C	175 °C	10 Ohm 15 V 20 A 400 V	Through Hole	TO-247N		42 ns 148 ns		650 V	TO-247-3	110 nC	1.9 V
Rohm Semiconductor RGW80TS65CHRC11		33 ns		214 W	-40 C	175 °C	10 Ohm 15 V 20 A 400 V	Through Hole	TO-247N	120 µJ 340 µJ	43 ns	145 ns	650 V	TO-247-3	110 nC	1.9 V	81 A
Rohm Semiconductor RGW80TS65HRC11	80 A		Trench Field Stop	214 W	-40 C	175 °C	10 Ohm 15 V 20 A 400 V	Through Hole	TO-247N		42 ns 148 ns		650 V	TO-247-3	110 nC	1.9 V

Catalog

High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Key Features

• AEC-Q101 Qualified, Low Collector - Emitter Saturation Voltage, Low Switching Loss & Soft Switching, Built in No Recovery Silicon Carbide SBD, Pb - free Lead Plating ; RoHS Compliant

Description

The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power conditioners, and UPS.