Discrete Semiconductor Products

RGW80TS65DGC11

NRND

Rohm Semiconductor

INSULATED GATE BIPOLAR TRANSISTOR, 78A I(C), 650V V(BR)CES, N-CHANNEL, TO-247, TO-247N, 3 PIN

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Discrete Semiconductor Products

RGW80TS65DGC11

NRND

Rohm Semiconductor

INSULATED GATE BIPOLAR TRANSISTOR, 78A I(C), 650V V(BR)CES, N-CHANNEL, TO-247, TO-247N, 3 PIN

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGW80TS65DGC11

Current - Collector (Ic) (Max) [Max]	78 A
Gate Charge	110 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	214 W
Reverse Recovery Time (trr)	92 ns
Supplier Device Package	TO-247N
Switching Energy	720 µJ, 760 µJ
Td (on/off) @ 25°C	44 ns
Td (on/off) @ 25°C	143 ns
Test Condition	10 Ohm, 40 A, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max)	650 V

RGW80TS65DHR Series

High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Part	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	IGBT Type	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition	Mounting Type	Supplier Device Package	Switching Energy	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Gate Charge	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max)
Rohm Semiconductor RGW80TS65DGC11	78 A	92 ns	Trench Field Stop	214 W	-40 C	175 °C	10 Ohm 15 V 40 A 400 V	Through Hole	TO-247N	720 µJ 760 µJ	44 ns	143 ns	650 V	TO-247-3	110 nC	1.9 V
Rohm Semiconductor RGW80TS65DHRC11	80 A	92 ns	Trench Field Stop	214 W	-40 C	175 °C	10 Ohm 15 V 20 A 400 V	Through Hole	TO-247N		42 ns 148 ns		650 V	TO-247-3	110 nC	1.9 V
Rohm Semiconductor RGW80TS65CHRC11		33 ns		214 W	-40 C	175 °C	10 Ohm 15 V 20 A 400 V	Through Hole	TO-247N	120 µJ 340 µJ	43 ns	145 ns	650 V	TO-247-3	110 nC	1.9 V	81 A
Rohm Semiconductor RGW80TS65HRC11	80 A		Trench Field Stop	214 W	-40 C	175 °C	10 Ohm 15 V 20 A 400 V	Through Hole	TO-247N		42 ns 148 ns		650 V	TO-247-3	110 nC	1.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.23
		30	$ 4.94
		120	$ 4.23
		510	$ 3.76
		1020	$ 3.22
		2010	$ 3.03

Description

General part information

RGW80TS65DHR Series

The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power conditioners, and UPS.

Documents

Technical documentation and resources

No documents available