Discrete Semiconductor Products

RGW80TS65DGC11

NRND

Rohm Semiconductor

IGBT TRNCH FIELD 650V 78A TO247N

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Discrete Semiconductor Products

RGW80TS65DGC11

NRND

Rohm Semiconductor

IGBT TRNCH FIELD 650V 78A TO247N

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGW80TS65DGC11

Current - Collector (Ic) (Max) [Max]	78 A
Gate Charge	110 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	214 W
Reverse Recovery Time (trr)	92 ns
Supplier Device Package	TO-247N
Switching Energy	720 µJ, 760 µJ
Td (on/off) @ 25°C	44 ns, 143 ns
Test Condition	400 V, 10 Ohm, 15 V, 40 A
Vce(on) (Max) @ Vge, Ic [Max]	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

RGW80 Series

High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Test Condition	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge	Power - Max [Max]	Td (on/off) @ 25°C	Switching Energy	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C
Rohm Semiconductor RGW80TS65EHRC11	Through Hole	80 A	1.9 V	650 V	TO-247-3	TO-247N	86 ns	10 Ohm 15 V 20 A 400 V	Trench Field Stop	175 °C	-40 °C	110 nC	214 W
Rohm Semiconductor RGW80TS65DGC11	Through Hole	78 A	1.9 V	650 V	TO-247-3	TO-247N	92 ns	10 Ohm 15 V 40 A 400 V	Trench Field Stop	175 °C	-40 °C	110 nC	214 W	44 ns 143 ns	720 µJ 760 µJ
Rohm Semiconductor RGW80TS65DHRC11	Through Hole	80 A	1.9 V	650 V	TO-247-3	TO-247N	92 ns	10 Ohm 15 V 20 A 400 V	Trench Field Stop	175 °C	-40 °C	110 nC	214 W			148 ns	42 ns
Rohm Semiconductor RGW80TS65CHRC11	Through Hole	81 A	1.9 V	650 V	TO-247-3	TO-247N	33 ns	10 Ohm 15 V 20 A 400 V		175 °C	-40 °C	110 nC	214 W		120 µJ 340 µJ			43 ns 145 ns
Rohm Semiconductor RGW80TS65HRC11	Through Hole	80 A	1.9 V	650 V	TO-247-3	TO-247N		10 Ohm 15 V 20 A 400 V	Trench Field Stop	175 °C	-40 °C	110 nC	214 W			148 ns	42 ns
Rohm Semiconductor RGW80TK65EGVC11	Through Hole	39 A	1.9 V	650 V	SC-93-3 TO-3PFM	TO-3PFM	102 ns	10 Ohm 15 V 40 A 400 V	Trench Field Stop	175 °C	-40 °C	110 nC	81 W	44 ns 143 ns	720 µJ 760 µJ

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	314	$ 7.07
	Tube	1	$ 6.23
		30	$ 4.94
		120	$ 4.23
		510	$ 3.76
		1020	$ 3.22
		2010	$ 3.03

Description

General part information

RGW80 Series

The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power conditioners, and UPS.

Documents

Technical documentation and resources

No documents available