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TO-247N

Discrete Semiconductor Products

RGW80TS65DHRC11

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Rohm Semiconductor

HIGH-SPEED FAST SWITCHING TYPE, 650V 40A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT FOR AUTOMOTIVE

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Search across all available documentation for this part.

DocumentsSimulation Guide for PTC Heater Thermal Simulation (ROHM Solution Simulator)Anti-Whisker formation +30

TO-247N

Discrete Semiconductor Products

RGW80TS65DHRC11

Active

Rohm Semiconductor

HIGH-SPEED FAST SWITCHING TYPE, 650V 40A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT FOR AUTOMOTIVE

Deep-Dive with AI

DocumentsSimulation Guide for PTC Heater Thermal Simulation (ROHM Solution Simulator)Anti-Whisker formation +30

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGW80TS65DHRC11

Current - Collector (Ic) (Max) [Max]	80 A
Gate Charge	110 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	214 W
Reverse Recovery Time (trr)	92 ns
Supplier Device Package	TO-247N
Td (on/off) @ 25°C	148 ns, 42 ns
Test Condition	20 A, 400 V, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.91
		10	$ 4.03
		450	$ 3.63
Newark	Each	1	$ 8.12
		10	$ 5.60
		25	$ 5.56
		50	$ 5.54
		100	$ 5.51
		250	$ 4.65
		900	$ 3.78

Description

General part information

RGW80TS65DHR Series

The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power conditioners, and UPS.

Documents

Technical documentation and resources

Simulation Guide for PTC Heater Thermal Simulation (ROHM Solution Simulator)

Anti-Whisker formation

Package Information

Judgment Criteria of Thermal Evaluation

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

What Is Thermal Design

Method for Monitoring Switching Waveform

Schematic Design & Verification

Types and Features of Transistors

Application Note

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Notes for Temperature Measurement Using Thermocouples

Precautions for Thermal Resistance of Insulation Sheet

Compliance of the ELV directive

Environmental Data

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

About Flammability of Materials

Environmental Data

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

4 Steps for Successful Thermal Designing of Power Devices

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

Two-Resistor Model for Thermal Simulation

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

RGW80TS65DHR Data Sheet

How to Create Symbols for PSpice Models

Package Dimensions

Package Information

Measurement Method and Usage of Thermal Resistance RthJC

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

How to Use the Thermal Resistance and Thermal Characteristics Parameters

PCB Layout Thermal Design Guide

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Moisture Sensitivity Level

Package Information

About Export Administration Regulations (EAR)

Export Information

Technical Data Sheet EN

RGW80TS65DHR Series

High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Part	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	IGBT Type	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition	Mounting Type	Supplier Device Package	Switching Energy	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Gate Charge	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max)
Rohm Semiconductor RGW80TS65DGC11	78 A	92 ns	Trench Field Stop	214 W	-40 C	175 °C	10 Ohm 15 V 40 A 400 V	Through Hole	TO-247N	720 µJ 760 µJ	44 ns	143 ns	650 V	TO-247-3	110 nC	1.9 V
Rohm Semiconductor RGW80TS65DHRC11	80 A	92 ns	Trench Field Stop	214 W	-40 C	175 °C	10 Ohm 15 V 20 A 400 V	Through Hole	TO-247N		42 ns 148 ns		650 V	TO-247-3	110 nC	1.9 V
Rohm Semiconductor RGW80TS65CHRC11		33 ns		214 W	-40 C	175 °C	10 Ohm 15 V 20 A 400 V	Through Hole	TO-247N	120 µJ 340 µJ	43 ns	145 ns	650 V	TO-247-3	110 nC	1.9 V	81 A
Rohm Semiconductor RGW80TS65HRC11	80 A		Trench Field Stop	214 W	-40 C	175 °C	10 Ohm 15 V 20 A 400 V	Through Hole	TO-247N		42 ns 148 ns		650 V	TO-247-3	110 nC	1.9 V