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TO-220-3
Discrete Semiconductor Products

STP45NF06

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STMicroelectronics

N-CHANNEL 60 V, 0.22 OHM TYP., 38 A, STRIPFET(TM) II POWER MOSFET IN A TO-220 PACKAGE

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DocumentsTN1224+14
TO-220-3
Discrete Semiconductor Products

STP45NF06

Active
STMicroelectronics

N-CHANNEL 60 V, 0.22 OHM TYP., 38 A, STRIPFET(TM) II POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsTN1224+14

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP45NF06
Current - Continuous Drain (Id) @ 25°C38 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]58 nC
Input Capacitance (Ciss) (Max) @ Vds980 pF
Mounting TypeThrough Hole
Operating Temperature175 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]80 W
Rds On (Max) @ Id, Vgs28 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1367$ 0.83
Tube 1$ 1.65
50$ 1.33
100$ 1.09
500$ 0.92
1000$ 0.78
2000$ 0.74
5000$ 0.72
10000$ 0.69
NewarkEach 1$ 0.70
10$ 0.69
100$ 0.69
500$ 0.69
1000$ 0.69
2500$ 0.59
10000$ 0.56

Description

General part information

STP45 Series

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.