Discrete Semiconductor Products

STP45N60DM2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 0.085 OHM TYP., 34 A MDMESH DM2 POWER MOSFET IN A TO-220 PACKAGE

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Discrete Semiconductor Products

STP45N60DM2AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V, 0.085 OHM TYP., 34 A MDMESH DM2 POWER MOSFET IN A TO-220 PACKAGE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP45N60DM2AG

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	250 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	93 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STP45 Series

Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package

Part	Grade	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Qualification	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Operating Temperature
STMicroelectronics STP45N60DM2AG	Automotive	34 A	56 nC	TO-220	AEC-Q101	25 V	TO-220-3	5 V	MOSFET (Metal Oxide)	150 °C	-55 °C	Through Hole	250 W	N-Channel	600 V	93 mOhm	10 V	2500 pF
STMicroelectronics STP45NF06		38 A		TO-220		20 V	TO-220-3	4 V	MOSFET (Metal Oxide)			Through Hole		N-Channel	60 V	28 mOhm	10 V	980 pF	58 nC	80 W	175 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 6.41
	Tube	1	$ 6.67
		50	$ 3.56
		100	$ 3.26
		500	$ 2.73
		1000	$ 2.69

Description

General part information

STP45 Series

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

Documents

Technical documentation and resources