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Technical Specifications
Parameters and characteristics for this part
| Specification | APT30M40JVFR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70 A |
| Drain to Source Voltage (Vdss) | 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 425 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 10200 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) | 450 W |
| Rds On (Max) @ Id, Vgs | 40 mOhm |
| Supplier Device Package | ISOTOP® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 20 | $ 40.76 | |
| Microchip Direct | TUBE | 1 | $ 40.76 | |
| 100 | $ 35.18 | |||
| 250 | $ 33.88 | |||
| 500 | $ 33.08 | |||
| 1000 | $ 32.29 | |||
| 5000 | $ 31.22 | |||
Description
General part information
FREDFET-300V Series
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement
mode power MOSFETS. Both conduction and switching losses are addressed with
Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines
Documents
Technical documentation and resources