
Deep-Dive with AI
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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | APT30M70BVFRG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 48 A |
| Drain to Source Voltage (Vdss) | 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 225 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5870 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 370 W |
| Rds On (Max) @ Id, Vgs | 70 mOhm |
| Supplier Device Package | TO-247 [B] |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 40 | $ 15.53 | |
| Microchip Direct | TUBE | 1 | $ 15.53 | |
| 100 | $ 13.42 | |||
| 250 | $ 12.92 | |||
| 500 | $ 12.60 | |||
| 1000 | $ 12.32 | |||
| 5000 | $ 11.90 | |||
Description
General part information
FREDFET-300V Series
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement
mode power MOSFETS. Both conduction and switching losses are addressed with
Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines
Documents
Technical documentation and resources