Integrated Circuits (ICs)

LM5109AMA

Obsolete

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

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Integrated Circuits (ICs)

LM5109AMA

Obsolete

Texas Instruments

IC GATE DRVR HALF-BRIDGE 8SOIC

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	LM5109AMA

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	1 A
Current - Peak Output (Source, Sink) [custom]	1 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]	108 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [custom]	2.2 V
Logic Voltage - VIL, VIH [custom]	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	15 ns
Rise / Fall Time (Typ) [custom]	15 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	14 V
Voltage - Supply [Min]	8 V

LM5109B-Q1 Series

Automotive 1-A, 100-V half bridge gate driver with 8-V UVLO and high noise immunity

Part	Number of Drivers	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Channel Type	Operating Temperature [Min]	Operating Temperature [Max]	Driven Configuration	Voltage - Supply [Min]	Voltage - Supply [Max]	Input Type	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Gate Type	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Grade	Qualification
Texas Instruments LM5109AMA/NOPB	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-SOIC	3.9 mm	0.154 in	8-SOIC	108 V	Surface Mount
Texas Instruments LM5109MA	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-SOIC	3.9 mm	0.154 in	8-SOIC	118 V	Surface Mount
Texas Instruments LM5109MAX/NOPB	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-SOIC	3.9 mm	0.154 in	8-SOIC	118 V	Surface Mount
Texas Instruments LM5109BSDX	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-WDFN Exposed Pad			8-WSON (4x4)	108 V	Surface Mount
Texas Instruments LM5109ASDX	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-WDFN Exposed Pad			8-WSON (4x4)	108 V	Surface Mount
Texas Instruments LM5109BQNGTTQ1	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-WDFN Exposed Pad			8-WSON (4x4)	108 V	Surface Mount	Automotive	AEC-Q100
Texas Instruments LM5109BSDX/NOPB	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-WDFN Exposed Pad			8-WSON (4x4)	108 V	Surface Mount
Texas Instruments LM5109ASDX/NOPB	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	MOSFET (N-Channel) N-Channel MOSFET	8-WDFN Exposed Pad			8-WSON (4x4)	108 V	Surface Mount
Texas Instruments LM5109AMA	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-SOIC	3.9 mm	0.154 in	8-SOIC	108 V	Surface Mount
Texas Instruments LM5109MA/NOPB	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-SOIC	3.9 mm	0.154 in	8-SOIC	118 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

LM5109B-Q1 Series

The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.

Documents

Technical documentation and resources