LM5109B-Q1 Series

Automotive 1-A, 100-V half bridge gate driver with 8-V UVLO and high noise immunity

Catalog

Automotive 1-A, 100-V half bridge gate driver with 8-V UVLO and high noise immunity

Part	Number of Drivers	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Channel Type	Operating Temperature [Min]	Operating Temperature [Max]	Driven Configuration	Voltage - Supply [Min]	Voltage - Supply [Max]	Input Type	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Gate Type	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Grade	Qualification
Texas Instruments LM5109AMA/NOPB	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-SOIC	3.9 mm	0.154 in	8-SOIC	108 V	Surface Mount
Texas Instruments LM5109MA	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-SOIC	3.9 mm	0.154 in	8-SOIC	118 V	Surface Mount
Texas Instruments LM5109MAX/NOPB	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-SOIC	3.9 mm	0.154 in	8-SOIC	118 V	Surface Mount
Texas Instruments LM5109BSDX	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-WDFN Exposed Pad			8-WSON (4x4)	108 V	Surface Mount
Texas Instruments LM5109ASDX	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-WDFN Exposed Pad			8-WSON (4x4)	108 V	Surface Mount
Texas Instruments LM5109BQNGTTQ1	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-WDFN Exposed Pad			8-WSON (4x4)	108 V	Surface Mount	Automotive	AEC-Q100
Texas Instruments LM5109BSDX/NOPB	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-WDFN Exposed Pad			8-WSON (4x4)	108 V	Surface Mount
Texas Instruments LM5109ASDX/NOPB	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	MOSFET (N-Channel) N-Channel MOSFET	8-WDFN Exposed Pad			8-WSON (4x4)	108 V	Surface Mount
Texas Instruments LM5109AMA	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-SOIC	3.9 mm	0.154 in	8-SOIC	108 V	Surface Mount
Texas Instruments LM5109MA/NOPB	2	15 ns	15 ns	Independent	-40 °C	125 ¯C	Half-Bridge	8 V	14 V	Non-Inverting	2.2 V	0.8 V	1 A	1 A	N-Channel MOSFET	8-SOIC	3.9 mm	0.154 in	8-SOIC	118 V	Surface Mount

Key Features

• Qualified for Automotive ApplicationsAEC-Q100 Qualified With the Following ResultsDevice Temperature Grade 1Device HBM ESD Classification Level 1CDevice CDM ESD Classification Level C4ADrives Both a High-Side and Low-Side N-ChannelMOSFET1-A Peak Output Current (1.0-A Sink/1.0-ASource)Independent TTL/CMOS Compatible InputsBootstrap Supply Voltage to 108-V DCFast Propagation Times (30 ns Typical)Drives 1000-pF Load with 15-ns Rise and FallTimesExcellent Propagation Delay Matching (2 nsTypical)Supply Rail Under-Voltage LockoutLow Power ConsumptionThermally-Enhanced WSON-8 PackageQualified for Automotive ApplicationsAEC-Q100 Qualified With the Following ResultsDevice Temperature Grade 1Device HBM ESD Classification Level 1CDevice CDM ESD Classification Level C4ADrives Both a High-Side and Low-Side N-ChannelMOSFET1-A Peak Output Current (1.0-A Sink/1.0-ASource)Independent TTL/CMOS Compatible InputsBootstrap Supply Voltage to 108-V DCFast Propagation Times (30 ns Typical)Drives 1000-pF Load with 15-ns Rise and FallTimesExcellent Propagation Delay Matching (2 nsTypical)Supply Rail Under-Voltage LockoutLow Power ConsumptionThermally-Enhanced WSON-8 Package

Description

The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages. The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.