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8-WFDFN Exposed Pad
Integrated Circuits (ICs)

LM5109BSDX/NOPB

Active
Texas Instruments

1-A, 100-V HALF BRIDGE GATE DRIVER WITH 8-V UVLO AND HIGH NOISE IMMUNITY

8-WFDFN Exposed Pad
Integrated Circuits (ICs)

LM5109BSDX/NOPB

Active
Texas Instruments

1-A, 100-V HALF BRIDGE GATE DRIVER WITH 8-V UVLO AND HIGH NOISE IMMUNITY

Technical Specifications

Parameters and characteristics for this part

SpecificationLM5109BSDX/NOPB
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]1 A
Current - Peak Output (Source, Sink) [custom]1 A
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]108 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH [custom]2.2 V
Logic Voltage - VIL, VIH [custom]0.8 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Package / Case8-WDFN Exposed Pad
Rise / Fall Time (Typ) [custom]15 ns
Rise / Fall Time (Typ) [custom]15 ns
Supplier Device Package8-WSON (4x4)
Voltage - Supply [Max]14 V
Voltage - Supply [Min]8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 4500$ 0.32
9000$ 0.31
13500$ 0.31
DigikeyCut Tape (CT) 1$ 1.33
10$ 1.19
25$ 1.13
100$ 0.93
250$ 0.87
500$ 0.77
1000$ 0.60
Digi-Reel® 1$ 1.33
10$ 1.19
25$ 1.13
100$ 0.93
250$ 0.87
500$ 0.77
1000$ 0.60
Tape & Reel (TR) 4500$ 0.35
9000$ 0.33
13500$ 0.32
31500$ 0.30
Texas InstrumentsLARGE T&R 1$ 0.59
100$ 0.46
250$ 0.34
1000$ 0.24

Description

General part information

LM5109B-Q1 Series

The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.

The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.