LM5109ASDX/NOPB
Active1-A, 100-V HALF BRIDGE GATE DRIVER WITH 8-V UVLO
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LM5109ASDX/NOPB
Active1-A, 100-V HALF BRIDGE GATE DRIVER WITH 8-V UVLO
Technical Specifications
Parameters and characteristics for this part
| Specification | LM5109ASDX/NOPB |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 1 A |
| Current - Peak Output (Source, Sink) [custom] | 1 A |
| Driven Configuration | Half-Bridge |
| Gate Type | MOSFET (N-Channel), N-Channel MOSFET |
| High Side Voltage - Max (Bootstrap) [Max] | 108 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH [custom] | 2.2 V |
| Logic Voltage - VIL, VIH [custom] | 0.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 ¯C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-WDFN Exposed Pad |
| Rise / Fall Time (Typ) [custom] | 15 ns |
| Rise / Fall Time (Typ) [custom] | 15 ns |
| Supplier Device Package | 8-WSON (4x4) |
| Voltage - Supply [Max] | 14 V |
| Voltage - Supply [Min] | 8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.44 | |
| 10 | $ 1.35 | |||
| 25 | $ 1.28 | |||
| 100 | $ 1.09 | |||
| 250 | $ 1.02 | |||
| 500 | $ 0.89 | |||
| 1000 | $ 0.74 | |||
| Digi-Reel® | 1 | $ 1.44 | ||
| 10 | $ 1.35 | |||
| 25 | $ 1.28 | |||
| 100 | $ 1.09 | |||
| 250 | $ 1.02 | |||
| 500 | $ 0.89 | |||
| 1000 | $ 0.74 | |||
| Tape & Reel (TR) | 4500 | $ 0.69 | ||
| 9000 | $ 0.68 | |||
| 13500 | $ 0.67 | |||
| Texas Instruments | LARGE T&R | 1 | $ 1.13 | |
| 100 | $ 0.94 | |||
| 250 | $ 0.67 | |||
| 1000 | $ 0.51 | |||
Description
General part information
LM5109B-Q1 Series
The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.
The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.
Documents
Technical documentation and resources
