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8-SOIC
Integrated Circuits (ICs)

TLC272CDG4

Obsolete
Texas Instruments

IC CMOS 2 CIRCUIT 8SOIC

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8-SOIC
Integrated Circuits (ICs)

TLC272CDG4

Obsolete
Texas Instruments

IC CMOS 2 CIRCUIT 8SOIC

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTLC272CDG4
Amplifier TypeCMOS
Current - Input Bias0.7 pA
Current - Output / Channel30 mA
Current - Supply1.9 mA
Gain Bandwidth Product2.2 MHz
Mounting TypeSurface Mount
Number of Circuits2
Operating Temperature [Max]70 °C
Operating Temperature [Min]0 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Slew Rate5.3 V/µs
Supplier Device Package8-SOIC
Voltage - Input Offset1.1 mV
Voltage - Supply Span (Max) [Max]16 V
Voltage - Supply Span (Min) [Min]3 V

TLC272B Series

Dual, 16-V, 2-MHz, 2-mV offset voltage, In to V- operational amplifier

PartVoltage - Supply Span (Max) [Max]Supplier Device PackageVoltage - Input OffsetOperating Temperature [Max]Operating Temperature [Min]Number of CircuitsGain Bandwidth ProductCurrent - Input BiasPackage / CasePackage / CasePackage / CaseMounting TypeAmplifier TypeSlew RateCurrent - Output / ChannelVoltage - Supply Span (Min) [Min]Package / Case [y]Package / Case [x]Current - SupplyPackage / Case [custom]Package / Case [custom]
PDIP (P)
Texas Instruments
16 V
8-PDIP
290 µV
85 °C
-40 °C
2
2.2 MHz
0.7 pA
0.3 in
8-DIP
7.62 mm
Through Hole
CMOS
5.3 V/µs
30 mA
4 V
INFINEON AUIR2085STR
Texas Instruments
16 V
8-SOIC
1.1 mV
70 °C
0 °C
2
2.2 MHz
0.7 pA
8-SOIC
Surface Mount
CMOS
5.3 V/µs
30 mA
3 V
3.9 mm
0.154 in
1.9 mA
8-SOIC
Texas Instruments
16 V
8-SOIC
290 µV
70 °C
0 °C
2
2.2 MHz
0.7 pA
8-SOIC
Surface Mount
CMOS
5.3 V/µs
30 mA
3 V
3.9 mm
0.154 in
1.9 mA
8-SOIC
Texas Instruments
16 V
8-SOIC
1.1 mV
70 °C
0 °C
2
2.2 MHz
0.7 pA
8-SOIC
Surface Mount
CMOS
5.3 V/µs
30 mA
3 V
3.9 mm
0.154 in
1.9 mA
8-TSSOP
Texas Instruments
16 V
8-TSSOP
1.1 mV
70 °C
0 °C
2
2.2 MHz
0.7 pA
8-TSSOP
Surface Mount
CMOS
5.3 V/µs
30 mA
3 V
1.9 mA
0.173 "
4.4 mm
SOIC (D)
Texas Instruments
16 V
8-SOIC
290 µV
85 °C
-40 °C
2
2.2 MHz
0.7 pA
8-SOIC
Surface Mount
CMOS
5.3 V/µs
30 mA
4 V
3.9 mm
0.154 in
8-SOIC
Texas Instruments
16 V
8-SO
900 µV
70 °C
0 °C
2
2.2 MHz
0.7 pA
8-SOIC
Surface Mount
CMOS
5.3 V/µs
30 mA
3 V
5.3 mm
0.209 "
1.9 mA
PDIP (P)
Texas Instruments
16 V
8-PDIP
900 µV
85 °C
-40 °C
2
2.2 MHz
0.7 pA
0.3 in
8-DIP
7.62 mm
Through Hole
CMOS
5.3 V/µs
30 mA
4 V
8-DIP
Texas Instruments
16 V
8-PDIP
900 µV
70 °C
0 °C
2
2.2 MHz
0.7 pA
0.3 in
8-DIP
7.62 mm
Through Hole
CMOS
5.3 V/µs
30 mA
3 V
1.9 mA
8-DIP
Texas Instruments
16 V
8-PDIP
290 µV
70 °C
0 °C
2
2.2 MHz
0.7 pA
0.3 in
8-DIP
7.62 mm
Through Hole
CMOS
5.3 V/µs
30 mA
3 V
1.9 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.67
10$ 1.50
75$ 1.42
150$ 1.21
300$ 1.14
525$ 0.99

Description

General part information

TLC272B Series

The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.

These devices use Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

Documents

Technical documentation and resources

No documents available