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8-SOIC
Integrated Circuits (ICs)

TLC272BCDRG4

Obsolete
Texas Instruments

IC CMOS 2 CIRCUIT 8SOIC

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8-SOIC
Integrated Circuits (ICs)

TLC272BCDRG4

Obsolete
Texas Instruments

IC CMOS 2 CIRCUIT 8SOIC

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTLC272BCDRG4
Amplifier TypeCMOS
Current - Input Bias0.7 pA
Current - Output / Channel30 mA
Current - Supply1.9 mA
Gain Bandwidth Product2.2 MHz
Mounting TypeSurface Mount
Number of Circuits2
Operating Temperature [Max]70 °C
Operating Temperature [Min]0 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Slew Rate5.3 V/µs
Supplier Device Package8-SOIC
Voltage - Input Offset290 µV
Voltage - Supply Span (Max) [Max]16 V
Voltage - Supply Span (Min) [Min]3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

TLC272B Series

The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.

These devices use Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

Documents

Technical documentation and resources

No documents available