Specification	TLC272BID

Amplifier Type	CMOS
Current - Input Bias	0.7 pA
Current - Output / Channel	30 mA
Gain Bandwidth Product	2.2 MHz
Mounting Type	Surface Mount
Number of Circuits	2
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Slew Rate	5.3 V/µs
Supplier Device Package	8-SOIC
Voltage - Input Offset	290 µV
Voltage - Supply Span (Max) [Max]	16 V
Voltage - Supply Span (Min) [Min]	4 V

TLC272B Series

Dual, 16-V, 2-MHz, 2-mV offset voltage, In to V- operational amplifier

Part	Voltage - Supply Span (Max) [Max]	Supplier Device Package	Voltage - Input Offset	Operating Temperature [Max]	Operating Temperature [Min]	Number of Circuits	Gain Bandwidth Product	Current - Input Bias	Package / Case	Package / Case	Package / Case	Mounting Type	Amplifier Type	Slew Rate	Current - Output / Channel	Voltage - Supply Span (Min) [Min]	Package / Case [y]	Package / Case [x]	Current - Supply	Package / Case [custom]	Package / Case [custom]
Texas Instruments TLC272BIP	16 V	8-PDIP	290 µV	85 °C	-40 °C	2	2.2 MHz	0.7 pA	0.3 in	8-DIP	7.62 mm	Through Hole	CMOS	5.3 V/µs	30 mA	4 V
Texas Instruments TLC272CDR	16 V	8-SOIC	1.1 mV	70 °C	0 °C	2	2.2 MHz	0.7 pA		8-SOIC		Surface Mount	CMOS	5.3 V/µs	30 mA	3 V	3.9 mm	0.154 in	1.9 mA
Texas Instruments TLC272BCDRG4	16 V	8-SOIC	290 µV	70 °C	0 °C	2	2.2 MHz	0.7 pA		8-SOIC		Surface Mount	CMOS	5.3 V/µs	30 mA	3 V	3.9 mm	0.154 in	1.9 mA
Texas Instruments TLC272CDG4	16 V	8-SOIC	1.1 mV	70 °C	0 °C	2	2.2 MHz	0.7 pA		8-SOIC		Surface Mount	CMOS	5.3 V/µs	30 mA	3 V	3.9 mm	0.154 in	1.9 mA
Texas Instruments TLC272CPWR	16 V	8-TSSOP	1.1 mV	70 °C	0 °C	2	2.2 MHz	0.7 pA		8-TSSOP		Surface Mount	CMOS	5.3 V/µs	30 mA	3 V			1.9 mA	0.173 "	4.4 mm
Texas Instruments TLC272BID	16 V	8-SOIC	290 µV	85 °C	-40 °C	2	2.2 MHz	0.7 pA		8-SOIC		Surface Mount	CMOS	5.3 V/µs	30 mA	4 V	3.9 mm	0.154 in
Texas Instruments TLC272ACPS	16 V	8-SO	900 µV	70 °C	0 °C	2	2.2 MHz	0.7 pA		8-SOIC		Surface Mount	CMOS	5.3 V/µs	30 mA	3 V	5.3 mm	0.209 "	1.9 mA
Texas Instruments TLC272AIP	16 V	8-PDIP	900 µV	85 °C	-40 °C	2	2.2 MHz	0.7 pA	0.3 in	8-DIP	7.62 mm	Through Hole	CMOS	5.3 V/µs	30 mA	4 V
Texas Instruments TLC272ACPG4	16 V	8-PDIP	900 µV	70 °C	0 °C	2	2.2 MHz	0.7 pA	0.3 in	8-DIP	7.62 mm	Through Hole	CMOS	5.3 V/µs	30 mA	3 V			1.9 mA
Texas Instruments TLC272BCPG4	16 V	8-PDIP	290 µV	70 °C	0 °C	2	2.2 MHz	0.7 pA	0.3 in	8-DIP	7.62 mm	Through Hole	CMOS	5.3 V/µs	30 mA	3 V			1.9 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.83
		10	$ 1.35
		25	$ 1.62
		75	$ 1.12
		100	$ 1.32
		150	$ 1.06
		250	$ 1.17
		300	$ 1.02
		500	$ 1.08
		525	$ 0.99
		1000	$ 1.01
		1050	$ 0.96
		2500	$ 0.93
		2550	$ 0.93

Description

General part information

TLC272B Series

The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.

These devices use Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

Documents

Technical documentation and resources

TLC272 and TLC277 EMI Immunity Performance

Application note

LinCMOS Precision Dual Operational-Amplifiers datasheet (Rev. E)

Data sheet

Errata for TLC272/2A/2B/2Y/77 Data Sheet SLOS091E: Error in Elec Characteristics

Errata