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STPSC6TH13TI
Discrete Semiconductor Products

STPSC10TH13TI

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STMicroelectronics

2 X 650V TANDEM, 10 A HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE

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DocumentsAN5088+10
STPSC6TH13TI
Discrete Semiconductor Products

STPSC10TH13TI

Active
STMicroelectronics

2 X 650V TANDEM, 10 A HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE

Deep-Dive with AI

DocumentsAN5088+10

Technical Specifications

Parameters and characteristics for this part

SpecificationSTPSC10TH13TI
Current - Average Rectified (Io) (per Diode)10 A
Current - Reverse Leakage @ Vr100 µA
Diode Configuration1 Pair Series Connection
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Package / CaseTO-220-3
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackageTO-220AB Insulated
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If [Max]1.75 V

STPSC10 Series

2 x 650V tandem, 10 A High Surge Silicon Carbide Power Schottky Diode

PartSpeedVoltage - DC Reverse (Vr) (Max) [Max]Mounting TypeSupplier Device PackageCurrent - Reverse Leakage @ VrCapacitance @ Vr, FVoltage - Forward (Vf) (Max) @ If [Max]Current - Average Rectified (Io)TechnologyReverse Recovery Time (trr)Operating Temperature - Junction [Min]Operating Temperature - Junction [Max]Package / CaseVoltage - Forward (Vf) (Max) @ IfQualificationGradeCurrent - Average Rectified (Io) (per Diode)Diode Configuration
MFG_DPAK(TO252-3)
STMicroelectronics
STPSC10H065B-TR
500 mA
650 V
Surface Mount
DPAK
100 µA
480 pF
1.75 V
10 A
SiC (Silicon Carbide) Schottky
0 ns
-40 °C
175 ░C
DPAK (2 Leads + Tab)
SC-63
TO-252-3
8 Power VDFN
STMicroelectronics
STPSC10H065DLF
500 mA
650 V
Surface Mount
PowerFlat™ (8x8) HV
100 µA
595 pF
10 A
SiC (Silicon Carbide) Schottky
0 ns
-40 °C
175 ░C
8-PowerVDFN
1.55 V
TO-262-3 Long Leads
STMicroelectronics
STPSC10C065RY
500 mA
650 V
Through Hole
I2PAK
100 µA
480 pF
10 A
SiC (Silicon Carbide) Schottky
0 ns
-40 °C
175 ░C
I2PAK
TO-262-3 Long Leads
TO-262AA
AEC-Q101
Automotive
STMICROELECTRONICS L4941BDT-TR
STMicroelectronics
STPSC10H065GY-TR
500 mA
650 V
Surface Mount
D2PAK
100 µA
480 pF
1.75 V
10 A
SiC (Silicon Carbide) Schottky
0 ns
-40 °C
175 ░C
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
AEC-Q101
Automotive
TO-220AC
STMicroelectronics
STPSC10H12DY
500 mA
1.2 kV
Through Hole
TO-220AC
60 µA
725 pF
1.5 V
10 A
SiC (Silicon Carbide) Schottky
0 ns
-40 °C
175 ░C
TO-220-2
AEC-Q101
Automotive
D²PAK
STMicroelectronics
STPSC10H065G-TR
500 mA
650 V
Surface Mount
D2PAK
100 µA
480 pF
1.75 V
10 A
SiC (Silicon Carbide) Schottky
0 ns
-40 °C
175 ░C
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
STMICROELECTRONICS STPSC20H12G-TR
STMicroelectronics
STPSC10H12GY-TR
500 mA
1.2 kV
Surface Mount
D2PAK
60 µA
725 pF
1.5 V
10 A
SiC (Silicon Carbide) Schottky
0 ns
-40 °C
175 ░C
D2PAK (2 Leads + Tab)
TO-263-3
TO-263AB
AEC-Q101
Automotive
STPSC6TH13TI
STMicroelectronics
STPSC10TH13TI
500 mA
650 V
Through Hole
TO-220AB Insulated
100 µA
1.75 V
SiC (Silicon Carbide) Schottky
0 ns
150 °C
TO-220-3
10 A
1 Pair Series Connection
MFG_DPAK(TO252-3)
STMicroelectronics
STPSC10H12B-TR1
500 mA
1.2 kV
Surface Mount
DPAK
60 µA
725 pF
1.5 V
10 A
SiC (Silicon Carbide) Schottky
0 ns
-40 °C
175 ░C
DPAK (2 Leads + Tab)
SC-63
TO-252-3
MFG_DPAK(TO252-3)
STMicroelectronics
STPSC10H12B2-TR
500 mA
1.2 kV
Surface Mount
DPAK HV
60 µA
725 pF
1.5 V
10 A
SiC (Silicon Carbide) Schottky
0 ns
-40 °C
175 ░C
DPAK (2 Leads + Tab)
SC-63
TO-252-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 421$ 5.70
Tube 1$ 6.84
50$ 5.46
100$ 4.88
500$ 4.31
1000$ 3.88
2000$ 3.63
MouserN/A 1$ 6.57
10$ 3.60
100$ 3.56
1000$ 3.55

Description

General part information

STPSC10 Series

The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.