Discrete Semiconductor Products

STPSC10C065RY

Obsolete

STMicroelectronics

DIODE SIL CARBIDE 650V 10A I2PAK

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Discrete Semiconductor Products

STPSC10C065RY

Obsolete

STMicroelectronics

DIODE SIL CARBIDE 650V 10A I2PAK

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STPSC10C065RY

Capacitance @ Vr, F	480 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	100 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Qualification	AEC-Q101
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	I2PAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

STPSC10 Series

2 x 650V tandem, 10 A High Surge Silicon Carbide Power Schottky Diode

Part	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Supplier Device Package	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Voltage - Forward (Vf) (Max) @ If	Qualification	Grade	Current - Average Rectified (Io) (per Diode)	Diode Configuration
STMicroelectronics STPSC10H065B-TR	500 mA	650 V	Surface Mount	DPAK	100 µA	480 pF	1.75 V	10 A	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3
STMicroelectronics STPSC10H065DLF	500 mA	650 V	Surface Mount	PowerFlat™ (8x8) HV	100 µA	595 pF		10 A	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	8-PowerVDFN	1.55 V
STMicroelectronics STPSC10C065RY	500 mA	650 V	Through Hole	I2PAK	100 µA	480 pF		10 A	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	I2PAK TO-262-3 Long Leads TO-262AA		AEC-Q101	Automotive
STMicroelectronics STPSC10H065GY-TR	500 mA	650 V	Surface Mount	D2PAK	100 µA	480 pF	1.75 V	10 A	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		AEC-Q101	Automotive
STMicroelectronics STPSC10H12DY	500 mA	1.2 kV	Through Hole	TO-220AC	60 µA	725 pF	1.5 V	10 A	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	TO-220-2		AEC-Q101	Automotive
STMicroelectronics STPSC10H065G-TR	500 mA	650 V	Surface Mount	D2PAK	100 µA	480 pF	1.75 V	10 A	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
STMicroelectronics STPSC10H12GY-TR	500 mA	1.2 kV	Surface Mount	D2PAK	60 µA	725 pF	1.5 V	10 A	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		AEC-Q101	Automotive
STMicroelectronics STPSC10TH13TI	500 mA	650 V	Through Hole	TO-220AB Insulated	100 µA		1.75 V		SiC (Silicon Carbide) Schottky		150 °C	TO-220-3				10 A	1 Pair Series Connection
STMicroelectronics STPSC10H12B-TR1	500 mA	1.2 kV	Surface Mount	DPAK	60 µA	725 pF	1.5 V	10 A	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3
STMicroelectronics STPSC10H12B2-TR	500 mA	1.2 kV	Surface Mount	DPAK HV	60 µA	725 pF	1.5 V	10 A	SiC (Silicon Carbide) Schottky	-40 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	964	$ 4.06
	Tube	1	$ 3.69
		50	$ 2.92
		100	$ 2.50
		500	$ 2.23

Description

General part information

STPSC10 Series

The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.

Documents

Technical documentation and resources