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Discrete Semiconductor Products

APTGT100H170G

Active
Microchip Technology

IGBT MODULE 1700V 150A 560W SP6

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Discrete Semiconductor Products

APTGT100H170G

Active
Microchip Technology

IGBT MODULE 1700V 150A 560W SP6

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTGT100H170G
ConfigurationFull Bridge Inverter
Current - Collector (Ic) (Max) [Max]150 A
Current - Collector Cutoff (Max) [Max]350 µA
IGBT TypeTrench Field Stop
InputStandard
Input Capacitance (Cies) @ Vce9 nF
Mounting TypeChassis Mount
NTC ThermistorFalse
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseSP6
Power - Max [Max]560 W
Supplier Device PackageSP6
Vce(on) (Max) @ Vge, Ic2.4 V
Voltage - Collector Emitter Breakdown (Max)1700 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 4$ 359.75
Microchip DirectN/A 1$ 359.75
50$ 298.08
100$ 267.24
250$ 256.97
500$ 226.13
1000$ 205.57
5000$ 180.90

Description

General part information

APTGT100DA120T1G-Module Series

* IGBT 3

* Low voltage drop

* Low tail current