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TO-3PFM

Discrete Semiconductor Products

RGTH40TK65DGC11

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Rohm Semiconductor

HIGH-SPEED SWITCHING TYPE, 650V 20A, FRD BUILT-IN, TO-3PFM, FIELD STOP TRENCH IGBT

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Search across all available documentation for this part.

DocumentsPart Explanation How to Create Symbols for PSpice Models +43

TO-3PFM

Discrete Semiconductor Products

RGTH40TK65DGC11

Active

Rohm Semiconductor

HIGH-SPEED SWITCHING TYPE, 650V 20A, FRD BUILT-IN, TO-3PFM, FIELD STOP TRENCH IGBT

Deep-Dive with AI

DocumentsPart Explanation How to Create Symbols for PSpice Models +43

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGTH40TK65DGC11

Current - Collector (Ic) (Max) [Max]	23 A
Current - Collector Pulsed (Icm)	80 A
Gate Charge	40 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-3PFM, SC-93-3
Power - Max [Max]	56 W
Reverse Recovery Time (trr)	58 ns
Supplier Device Package	TO-3PFM
Td (on/off) @ 25°C	73 ns, 22 ns
Test Condition	20 A, 10 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	440	$ 6.59
	Tube	1	$ 5.68
		30	$ 4.50
		120	$ 3.86
		510	$ 3.43
		1020	$ 2.93
		2010	$ 2.76
Newark	Each	1	$ 3.14

Description

General part information

RGTH40 Series

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Documents

Technical documentation and resources

Part Explanation

Application Note

How to Create Symbols for PSpice Models

Notes for Temperature Measurement Using Thermocouples

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

What Is Thermal Design

Explanation for Marking

Package Information

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Precautions When Measuring the Rear of the Package with a Thermocouple

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Notes for Calculating Power Consumption:Static Operation

RGTH40TK65D Data Sheet

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Types and Features of Transistors

Application Note

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Anti-Whisker formation

Package Information

Moisture Sensitivity Level

Package Information

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Compliance of the ELV directive

Environmental Data

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Measurement Method and Usage of Thermal Resistance RthJC

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

What is a Thermal Model? (IGBT)

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

Estimation of switching losses in IGBTs operating with resistive load

Schematic Design & Verification

Method for Monitoring Switching Waveform

Schematic Design & Verification

4 Steps for Successful Thermal Designing of Power Devices

Condition of Soldering

Package Information

Inner Structure

Package Information

Taping Information

Package Information

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Precautions for Thermal Resistance of Insulation Sheet

Package Dimensions

Package Information

Notes for Temperature Measurement Using Forward Voltage of PN Junction

How to Use LTspice® Models

Schematic Design & Verification

About Flammability of Materials

Environmental Data

PCB Layout Thermal Design Guide

Judgment Criteria of Thermal Evaluation

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

Two-Resistor Model for Thermal Simulation

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Reliability Test Result

Manufacturing Data

About Export Administration Regulations (EAR)

Export Information

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Basics of Thermal Resistance and Heat Dissipation

RGTH40 Series

High-Speed Switching Type, 650V 20A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT

Part	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Reverse Recovery Time (trr)	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Test Condition	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Package / Case	Current - Collector Pulsed (Icm)	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge
Rohm Semiconductor RGTH40TS65DGC13	144 W	40 A	22 ns 73 ns	58 ns	TO-247G	2.1 V	10 Ohm 15 V 20 A 400 V	175 °C	-40 °C	Through Hole	TO-247-3	80 A	Trench Field Stop	650 V	40 nC
Rohm Semiconductor RGTH40TS65GC13	144 W	40 A	22 ns 73 ns		TO-247G	2.1 V	10 Ohm 15 V 20 A 400 V	175 °C	-40 °C	Through Hole	TO-247-3	80 A	Trench Field Stop	650 V	40 nC
Rohm Semiconductor RGTH40TK65GC11	56 W	23 A	22 ns 73 ns		TO-3PFM	2.1 V	10 Ohm 15 V 20 A 400 V	175 °C	-40 °C	Through Hole	SC-93-3 TO-3PFM	80 A	Trench Field Stop	650 V	40 nC
Rohm Semiconductor RGTH40TK65DGC11	56 W	23 A	22 ns 73 ns	58 ns	TO-3PFM	2.1 V	10 Ohm 15 V 20 A 400 V	175 °C	-40 °C	Through Hole	SC-93-3 TO-3PFM	80 A	Trench Field Stop	650 V	40 nC
Rohm Semiconductor RGTH40TS65DGC11	144 W	40 A	22 ns 73 ns	58 ns	TO-247N	2.1 V	10 Ohm 15 V 20 A 400 V	175 °C	-40 °C	Through Hole	TO-247-3	80 A	Trench Field Stop	650 V	40 nC