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Discrete Semiconductor Products

RGTH40TK65GC11

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Rohm Semiconductor

IGBTS ROHM'S IGBT PRODUCTS WILL CONTRIBUTE TO ENERGY SAVING HIGH EFFICIENCY AND A WIDE RANGE OF HIGH VOLTAGE AND HIGH-CURRENT APPLICATIONS.

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Search across all available documentation for this part.

DocumentsHow to Use the Thermal Resistance and Thermal Characteristics Parameters 4 Steps for Successful Thermal Designing of Power Devices +43

Product thumbnail image

Discrete Semiconductor Products

RGTH40TK65GC11

Active

Rohm Semiconductor

IGBTS ROHM'S IGBT PRODUCTS WILL CONTRIBUTE TO ENERGY SAVING HIGH EFFICIENCY AND A WIDE RANGE OF HIGH VOLTAGE AND HIGH-CURRENT APPLICATIONS.

Deep-Dive with AI

DocumentsHow to Use the Thermal Resistance and Thermal Characteristics Parameters 4 Steps for Successful Thermal Designing of Power Devices +43

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGTH40TK65GC11

Current - Collector (Ic) (Max) [Max]	23 A
Current - Collector Pulsed (Icm)	80 A
Gate Charge	40 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-3PFM, SC-93-3
Power - Max [Max]	56 W
Supplier Device Package	TO-3PFM
Td (on/off) @ 25°C	73 ns, 22 ns
Test Condition	20 A, 10 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	319	$ 3.17
	Tube	1	$ 3.17
		30	$ 1.71
		120	$ 1.39
		510	$ 1.16
		1020	$ 1.07
		2010	$ 1.00
		5010	$ 0.99
Mouser	N/A	1	$ 2.41
		25	$ 2.28
Newark	Each	1	$ 2.81
		10	$ 2.60
		25	$ 2.43

Description

General part information

RGTH40 Series

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Documents

Technical documentation and resources

How to Use the Thermal Resistance and Thermal Characteristics Parameters

4 Steps for Successful Thermal Designing of Power Devices

Inner Structure

Package Information

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

Method for Monitoring Switching Waveform

Schematic Design & Verification

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Precautions for Thermal Resistance of Insulation Sheet

Package Dimensions

Package Information

Compliance of the ELV directive

Environmental Data

Moisture Sensitivity Level

Package Information

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

How to Use LTspice® Models

Schematic Design & Verification

Types and Features of Transistors

Application Note

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Precautions When Measuring the Rear of the Package with a Thermocouple

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

About Export Administration Regulations (EAR)

Export Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

Condition of Soldering

Package Information

Anti-Whisker formation

Package Information

Measurement Method and Usage of Thermal Resistance RthJC

Two-Resistor Model for Thermal Simulation

Judgment Criteria of Thermal Evaluation

What is a Thermal Model? (IGBT)

RGTH40TK65 Data Sheet

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Notes for Calculating Power Consumption:Static Operation

Taping Information

Package Information

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Estimation of switching losses in IGBTs operating with resistive load

Schematic Design & Verification

Basics of Thermal Resistance and Heat Dissipation

Explanation for Marking

Package Information

Notes for Temperature Measurement Using Thermocouples

About Flammability of Materials

Environmental Data

How to Create Symbols for PSpice Models

What Is Thermal Design

PCB Layout Thermal Design Guide

Reliability Test Result

Manufacturing Data

Part Explanation

Application Note

Notes for Temperature Measurement Using Forward Voltage of PN Junction

RGTH40 Series

High-Speed Switching Type, 650V 20A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT

Part	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Reverse Recovery Time (trr)	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Test Condition	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Package / Case	Current - Collector Pulsed (Icm)	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Gate Charge
Rohm Semiconductor RGTH40TS65DGC13	144 W	40 A	22 ns 73 ns	58 ns	TO-247G	2.1 V	10 Ohm 15 V 20 A 400 V	175 °C	-40 °C	Through Hole	TO-247-3	80 A	Trench Field Stop	650 V	40 nC
Rohm Semiconductor RGTH40TS65GC13	144 W	40 A	22 ns 73 ns		TO-247G	2.1 V	10 Ohm 15 V 20 A 400 V	175 °C	-40 °C	Through Hole	TO-247-3	80 A	Trench Field Stop	650 V	40 nC
Rohm Semiconductor RGTH40TK65GC11	56 W	23 A	22 ns 73 ns		TO-3PFM	2.1 V	10 Ohm 15 V 20 A 400 V	175 °C	-40 °C	Through Hole	SC-93-3 TO-3PFM	80 A	Trench Field Stop	650 V	40 nC
Rohm Semiconductor RGTH40TK65DGC11	56 W	23 A	22 ns 73 ns	58 ns	TO-3PFM	2.1 V	10 Ohm 15 V 20 A 400 V	175 °C	-40 °C	Through Hole	SC-93-3 TO-3PFM	80 A	Trench Field Stop	650 V	40 nC
Rohm Semiconductor RGTH40TS65DGC11	144 W	40 A	22 ns 73 ns	58 ns	TO-247N	2.1 V	10 Ohm 15 V 20 A 400 V	175 °C	-40 °C	Through Hole	TO-247-3	80 A	Trench Field Stop	650 V	40 nC