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TO-39 TO-205AD
Discrete Semiconductor Products

2N5680

Active
Microchip Technology

120V PVP POWER BJT THT TO-39 ROHS COMPLIANT: YES

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TO-39 TO-205AD
Discrete Semiconductor Products

2N5680

Active
Microchip Technology

120V PVP POWER BJT THT TO-39 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N5680
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Mounting TypeThrough Hole
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]1 W
Supplier Device PackageTO-39 (TO-205AD)
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]120 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 21.63
Microchip DirectN/A 1$ 23.30
NewarkEach 1$ 0.54
100$ 21.63
500$ 20.80

Description

General part information

JAN2N5680-Transistor Series

This specification covers the performance requirements for PNP, silicon, amplifier, 2N5679 and 2N5680 transistors, complimentary to the 2N5681 and 2N5682 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/582 and two levels of product assurance (JANHC and JANKC) are provided for unencapsulated devices. The device package outlines are as follows: 2N5679 and 2N5680 TO-205AD (TO-39). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/582.

Documents

Technical documentation and resources