JAN2N5680-Transistor Series

PNP Silicon Amplifier -100V to -120V, -1A

Catalog

PNP Silicon Amplifier -100V to -120V, -1A

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Qualification	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Power - Max [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Grade
Microchip Technology JAN2N5680	Through Hole	1 A	10 µA	MIL-PRF-19500/582	40	TO-205AD TO-39-3 Metal Can	1 W	PNP	120 V	TO-39 (TO-205AD)	-65 ░C	200 °C	1 V	Military
Microchip Technology 2N5680	Through Hole	1 A	10 µA		40	TO-205AD TO-39-3 Metal Can	1 W	PNP	120 V	TO-39 (TO-205AD)			1 V

Catalog

PNP Silicon Amplifier -100V to -120V, -1A

Key Features

- The device package outlines are as follows: 2N5679 and 2N5680 TO-205AD (TO-39). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/582.

Description

This specification covers the performance requirements for PNP, silicon, amplifier, 2N5679 and 2N5680 transistors, complimentary to the 2N5681 and 2N5682 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/582 and two levels of product assurance (JANHC and JANKC) are provided for unencapsulated devices. The device package outlines are as follows: 2N5679 and 2N5680 TO-205AD (TO-39). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/582.