JAN2N5680
Active120V PVP POWER BJT THT TO-39 ROHS COMPLIANT: YES
Deep-Dive with AI
Search across all available documentation for this part.
JAN2N5680
Active120V PVP POWER BJT THT TO-39 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N5680 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -65 ░C |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 1 W |
| Qualification | MIL-PRF-19500/582 |
| Supplier Device Package | TO-39 (TO-205AD) |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 120 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 23.48 | |
| Microchip Direct | N/A | 1 | $ 25.28 | |
| Newark | Each | 100 | $ 23.48 | |
| 500 | $ 22.58 | |||
Description
General part information
JAN2N5680-Transistor Series
This specification covers the performance requirements for PNP, silicon, amplifier, 2N5679 and 2N5680 transistors, complimentary to the 2N5681 and 2N5682 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/582 and two levels of product assurance (JANHC and JANKC) are provided for unencapsulated devices. The device package outlines are as follows: 2N5679 and 2N5680 TO-205AD (TO-39). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/582.
Documents
Technical documentation and resources