Discrete Semiconductor Products

G05N06S2

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MOSFET 2N-CH 60V 5A 8SOP

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 5A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	G05N06S2

Configuration	2 N-Channel, 2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	22 nC, 26 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1374 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Power - Max	Input Capacitance (Ciss) (Max) @ Vds
Goford Semiconductor G05N06S2	2 N-Channel 2 N-Channel (Dual)	150 °C	-55 °C	2.5 V	60 V	1374 pF	22 nC 26 nC	0.154 in	8-SOIC	3.9 mm	5 A	MOSFET (Metal Oxide)	8-SOP	35 mOhm	Surface Mount
Goford Semiconductor G05NP06S2	N and P-Channel	150 °C	-55 °C	2 V 2.2 V	60 V		22 nC 37 nC	0.154 in	8-SOIC	3.9 mm	3.1 A 5 A	MOSFET (Metal Oxide)	8-SOP	36 mOhm 80 mOhm	Surface Mount	1.9 W 2.5 W	1336 pF 1454 pF

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