Discrete Semiconductor Products

G05N06S2

Active

MOSFET 2N-CH 60V 5A 8SOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET 2N-CH 60V 5A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	G05N06S2

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	5 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Max)	22 nC, 26 nC
Input Capacitance (Ciss) (Max)	1374 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC, 8-SOP
Package Width	3.9 mm
Power - Max (Tc)	3.1 W
Rds On (Max)	35 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

Part	Channel Count	Configuration	Operating Temperature (Min)	Operating Temperature (Max)	Configuration - Features	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Package Length	Package Name	Package Width	Current - Continuous Drain (Id) (Tc)	Technology	Power - Max (Tc)	Rds On (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc) (2)
Goford Semiconductor G05N06S2	2	N-Channel	-55 °C	150 °C	Dual	2.5 V	60 V	1374 pF	22 nC 26 nC	0.154 in	8-SOIC 8-SOP	3.9 mm	5 A	MOSFET (Metal Oxide)	3.1 W	35 mOhm	Surface Mount
Goford Semiconductor G05NP06S2		N P-Channel	-55 °C	150 °C		2 V 2.2 V	60 V	1336 pF 1454 pF	22 nC	0.154 in	8-SOIC 8-SOP	3.9 mm	5 A	MOSFET (Metal Oxide)	1.9 W 2.5 W	36 mOhm 80 mOhm	Surface Mount	3.1 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly