Discrete Semiconductor Products

G05NP06S2

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MOSFET N/P-CH 60V 5A/3.1A 8SOP

Discrete Semiconductor Products

Active

MOSFET N/P-CH 60V 5A/3.1A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	G05NP06S2

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Tc)	5 A
Current - Continuous Drain (Id) (Tc) (2)	3.1 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Max)	22 nC
Input Capacitance (Ciss) (Max)	1336 pF, 1454 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOP, 8-SOIC
Package Width	3.9 mm
Power - Max (Tc)	1.9 W, 2.5 W
Rds On (Max)	36 mOhm, 80 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2 V, 2.2 V

Part	Mounting Type	Gate Charge (Max)	Rds On (Max)	Power - Max (Tc)	Package Name	Technology	Current - Continuous Drain (Id) (Tc)	Package Length	Package Width	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Channel Count	Configuration	Configuration - Features	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc) (2)
Goford Semiconductor G05N06S2	Surface Mount	22 nC 26 nC	35 mOhm	3.1 W	8-SOIC 8-SOP	MOSFET (Metal Oxide)	5 A	0.154 in	3.9 mm	1374 pF	60 V	2.5 V	2	N-Channel	Dual	-55 °C	150 °C
Goford Semiconductor G05NP06S2	Surface Mount	22 nC	36 mOhm 80 mOhm	1.9 W 2.5 W	8-SOIC 8-SOP	MOSFET (Metal Oxide)	5 A	0.154 in	3.9 mm	1336 pF 1454 pF	60 V	2 V 2.2 V		N P-Channel		-55 °C	150 °C	3.1 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Mosfet Array 60V 5A (Tc), 3.1A (Tc) 2.5W (Tc), 1.9W (Tc) Surface Mount 8-SOP

Technical documentation and resources