Specification	RBQ30NS65ATL

Current - Average Rectified (Io) (per Diode)	15 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Surface Mount
Operating Temperature - Junction	150 ¯C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Speed	200 mA, 500 ns
Supplier Device Package	LPDS
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	65 V
Voltage - Forward (Vf) (Max) @ If	690 mV

RBQ30NS100AFH Series

Low IR, 100V, 30A, TO-263S (D2PAK), Schottky Barrier Diode for Automotive

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Operating Temperature - Junction	Current - Average Rectified (Io) (per Diode)	Package / Case	Mounting Type	Diode Configuration	Grade	Qualification	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)
Rohm Semiconductor RBQ30NS100ATL	770 mV	Schottky	TO-263S	100 V	200 µA	200 mA 500 ns	150 ¯C	30 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	1 Pair Common Cathode	Automotive	AEC-Q101
Rohm Semiconductor RBQ30NS100AFHTL	770 mV	Schottky	LPDS	100 V	200 µA	200 mA 500 ns	150 °C	30 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	1 Pair Common Cathode	Automotive	AEC-Q101
Rohm Semiconductor RBQ30T45ANZC9		Schottky	TO-220FN	45 V	450 µA	200 mA 500 ns	150 ¯C	15 A	TO-220-3 Full Pack	Through Hole	1 Pair Common Cathode			650 mV
Rohm Semiconductor RBQ30T65ANZC9		Schottky	TO-220FN	65 V	200 µA	200 mA 500 ns	150 ¯C	15 A	TO-220-3 Full Pack	Through Hole	1 Pair Common Cathode			690 mV
Rohm Semiconductor RBQ30NS45BTL		Schottky	LPDS	45 V		200 mA 500 ns	150 ¯C		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount				590 mV	30 A
Rohm Semiconductor RBQ30NS65ATL		Schottky	LPDS	65 V	200 µA	200 mA 500 ns	150 ¯C	15 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	1 Pair Common Cathode			690 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.54
		10	$ 1.64
		100	$ 1.12
		500	$ 0.90
	Tape & Reel (TR)	1000	$ 0.72
Newark	Each (Supplied on Cut Tape)	1	$ 1.12

Description

General part information

RBQ30NS100AFH Series

ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for phone and various portable electronics.

Documents

Technical documentation and resources

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

RBQ30NS65ATL

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RBQ30NS65ATL

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Technical Specifications

RBQ30NS100AFH Series

Pricing

Description

RBQ30NS100AFH Series

Documents

Impedance Characteristics of Bypass Capacitor

Two-Resistor Model for Thermal Simulation

Power Loss and Thermal Design of Diodes

PCB Layout Thermal Design Guide

Constitution Materials List

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Judgment Criteria of Thermal Evaluation

Notes for Temperature Measurement Using Thermocouples

What Is Thermal Design

How to Create Symbols for PSpice Models

How to Use LTspice&reg; Models: Tips for Improving Convergence

RBQ30NS65A Data Sheet

How to Use the Thermal Resistance and Thermal Characteristics Parameters

About Export Regulations

Measurement Method and Usage of Thermal Resistance RthJC

List of Diode Package Thermal Resistance

Inner Structure

Part Explanation

How to Select Reverse Current Protection Diodes for LDO Regulators

θ<sub>JA</sub> and Ψ<sub>JT</sub>

What is a Thermal Model? (Diode)

Method for Monitoring Switching Waveform

How to Select Rectifier Diodes

Reliability Test Result

Diode Types and Applications

Absolute Maximum Rating and Electrical Characteristics of Diodes

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Importance of Probe Calibration When Measuring Power: Deskew

RBQ30NS100AFH Series

How to Use LTspice® Models: Tips for Improving Convergence