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Discrete Semiconductor Products

RBQ30T65ANZC9

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Rohm Semiconductor

LOW IR, 65V, 30A, ITO-220AB, SCHOTTKY BARRIER DIODE

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Search across all available documentation for this part.

DocumentsAbout Export Regulations Measurement Method and Usage of Thermal Resistance RthJC +34

Product dimension image

Discrete Semiconductor Products

RBQ30T65ANZC9

Active

Rohm Semiconductor

LOW IR, 65V, 30A, ITO-220AB, SCHOTTKY BARRIER DIODE

Deep-Dive with AI

DocumentsAbout Export Regulations Measurement Method and Usage of Thermal Resistance RthJC +34

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RBQ30T65ANZC9

Current - Average Rectified (Io) (per Diode)	15 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction	150 ¯C
Package / Case	TO-220-3 Full Pack
Speed	200 mA, 500 ns
Supplier Device Package	TO-220FN
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	65 V
Voltage - Forward (Vf) (Max) @ If	690 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 0.58
		10	$ 0.50
		100	$ 0.35
		500	$ 0.29
		1000	$ 0.27

Description

General part information

RBQ30NS100AFH Series

ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for phone and various portable electronics.

Documents

Technical documentation and resources

About Export Regulations

Export Information

Measurement Method and Usage of Thermal Resistance RthJC

RBQ30T65ANZ Data Sheet

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

How to Use the Thermal Resistance and Thermal Characteristics Parameters

What Is Thermal Design

Absolute Maximum Rating and Electrical Characteristics of Diodes

Technical Article

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

About Flammability of Materials

Environmental Data

Diode Types and Applications

Technical Article

Notes for Temperature Measurement Using Thermocouples

How to Select Rectifier Diodes

Technical Article

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Inner Structure

Package Information

Constitution Materials List

Environmental Data

Reliability Test Result

Manufacturing Data

Power Loss and Thermal Design of Diodes

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Explanation for Marking

Package Information

RBQ30T65ANZ ESD Data

Characteristics Data

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

How to Select Reverse Current Protection Diodes for LDO Regulators

Schematic Design & Verification

PCB Layout Thermal Design Guide

Taping Information

Package Information

How to Create Symbols for PSpice Models

Method for Monitoring Switching Waveform

Schematic Design & Verification

Judgment Criteria of Thermal Evaluation

Package Dimensions

Package Information

Moisture Sensitivity Level - Diodes

Package Information

Condition of Soldering / Land Pattern Reference

Package Information

Part Explanation

Application Note

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

List of Diode Package Thermal Resistance

What is a Thermal Model? (Diode)

θ<sub>JA</sub> and Ψ<sub>JT</sub>

RBQ30NS100AFH Series

Low IR, 100V, 30A, TO-263S (D2PAK), Schottky Barrier Diode for Automotive

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Operating Temperature - Junction	Current - Average Rectified (Io) (per Diode)	Package / Case	Mounting Type	Diode Configuration	Grade	Qualification	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)
Rohm Semiconductor RBQ30NS100ATL	770 mV	Schottky	TO-263S	100 V	200 µA	200 mA 500 ns	150 ¯C	30 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	1 Pair Common Cathode	Automotive	AEC-Q101
Rohm Semiconductor RBQ30NS100AFHTL	770 mV	Schottky	LPDS	100 V	200 µA	200 mA 500 ns	150 °C	30 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	1 Pair Common Cathode	Automotive	AEC-Q101
Rohm Semiconductor RBQ30T45ANZC9		Schottky	TO-220FN	45 V	450 µA	200 mA 500 ns	150 ¯C	15 A	TO-220-3 Full Pack	Through Hole	1 Pair Common Cathode			650 mV
Rohm Semiconductor RBQ30T65ANZC9		Schottky	TO-220FN	65 V	200 µA	200 mA 500 ns	150 ¯C	15 A	TO-220-3 Full Pack	Through Hole	1 Pair Common Cathode			690 mV
Rohm Semiconductor RBQ30NS45BTL		Schottky	LPDS	45 V		200 mA 500 ns	150 ¯C		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount				590 mV	30 A
Rohm Semiconductor RBQ30NS65ATL		Schottky	LPDS	65 V	200 µA	200 mA 500 ns	150 ¯C	15 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	1 Pair Common Cathode			690 mV